Method for forming film layer with uniform thickness distribution and semiconductor structure
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- CHANGXIN MEMORY TECH INC
- Publication Date
- 2021-09-10
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Abstract
Description
technical field
[0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a film layer with uniform thickness distribution and a semiconductor structure. Background technique
[0002] A dynamic random access memory (Dynamic Random Access Memory, DRAM) is a semiconductor structure commonly used in electronic devices such as computers, and is composed of a plurality of storage units, and each storage unit usually includes a transistor and a capacitor. The gate of the transistor is electrically connected to the word line, the source is electrically connected to the bit line, and the drain is electrically connected to the capacitor. The word line voltage on the word line can control the opening and closing of the transistor, so that the stored data can be read through the bit line. Data information in the capacitor, or write data information into the capacitor.
[0003] In the existing DRAM manufacturing process, t...