A kind of mercury cadmium telluride mesa forming method
A molding method and technology of mercury cadmium telluride, applied in sustainable manufacturing/processing, climate sustainability, semiconductor devices, etc., can solve problems such as lateral corrosion, difficult control of mesa duty cycle, etc. Solve the effect of serious lateral corrosion
Active Publication Date: 2021-09-03
11TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
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[0003] An embodiment of the present invention provides a method for forming a mercury cadmium telluride mesa, which is used to solve the problems of severe lateral corrosion and difficult control of the duty cycle of the mesa in the prior art
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[0029] Exemplary embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. Although exemplary embodiments of the present invention are shown in the drawings, it should be understood that the invention may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided for more thorough understanding of the present invention and to fully convey the scope of the present invention to those skilled in the art.
[0030] figure 1 It is a flow chart of the mercury cadmium telluride mesa forming method in the embodiment of the present invention, as figure 1 As shown, an embodiment of the present invention provides a method for forming a mercury cadmium telluride mesa, including:
[0031] S101, coating a photoresist on the surface of HgCdTe to be photoetched, and performing photoetching to form an arrayed photoresist pattern;
[0032] It should be noted t...
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Abstract
The invention discloses a method for forming a mercury cadmium telluride mesa. The method comprises: coating photoresist on the surface of mercury cadmium telluride to be photoetched, and performing photoetching to form an arrayed photoresist pattern; Etching the HgCdTe surface with photoresist patterns to form an etching groove, the photoresist is suspended above the etching groove, and the depth of the etching groove is h1; the photoresist is heat-treated by a hard film process, so that the suspended above the etching groove The photoresist just covers the sidewall of the etching groove; the HgCdTe surface with the photoresist pattern is etched for the second time to form an isolation trench, and the depth of the isolation trench is h2, wherein, 1 / 3≤h1 / h2≤ 1 / 2; remove the photoresist on the surface of mercury cadmium telluride. By adopting the present invention, not only the non-damage preparation of the HgCdTe mesa can be realized, but also the control of the aspect ratio of the isolation trench can be realized, so as to solve the problem of serious lateral corrosion of the HgCdTe mesa, thereby ensuring the HgCdTe mesa The duty cycle of .
Description
technical field [0001] The invention relates to the field of semiconductor structure molding, in particular to a method for forming a mercury cadmium telluride mesa. Background technique [0002] In the related art, since the mesa wet etching process can realize non-damaging preparation of HgCdTe mesa, it is widely used. However, in the process of using the mesa wet etching process to realize the mesa process of the HgCdTe mesa heterojunction p-on-n, due to the isotropy of the corrosion, the lateral etching width is twice the etching depth, resulting in lateral corrosion. Corrosion is relatively serious, making it difficult to guarantee the duty cycle of the table. Contents of the invention [0003] An embodiment of the present invention provides a method for forming a mercury cadmium telluride mesa, which is used to solve the problems in the prior art that the side corrosion is severe and the duty ratio of the mesa is difficult to control. [0004] An embodiment of the ...
Claims
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IPC IPC(8): H01L21/027H01L21/467H01L21/4757H01L31/18G03F7/16
CPCG03F7/16H01L21/0274H01L21/467H01L21/4757H01L21/47573H01L31/18Y02P70/50
Inventor 刘世光张轶谭振
Owner 11TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP