Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for carrying out nonvolatile complex operation by utilizing memristor

A non-volatile, memristor technology, applied in the field of non-volatile complex arithmetic operations, can solve problems such as difficult implementation and no feasible technical solutions, achieve breakthrough speed and energy consumption bottlenecks, and efficiently implement complex The effect of the operation

Active Publication Date: 2019-10-22
PEKING UNIV
View PDF4 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, the technology of using non-volatile logic devices for energy-efficient computing is still in the initial stage of research, and most current technical research is still at the level of realizing basic Boolean logic functions, and it is more difficult to realize the technology for more complex computing functions such as arithmetic operations , and for the research of more complex problems, there is no feasible technical solution

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for carrying out nonvolatile complex operation by utilizing memristor
  • Method for carrying out nonvolatile complex operation by utilizing memristor
  • Method for carrying out nonvolatile complex operation by utilizing memristor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0029] Below in conjunction with accompanying drawing, further describe the present invention through embodiment, but do not limit the scope of the present invention in any way.

[0030] The invention provides a method for using a memristor to perform nonvolatile complex operations, and uses the memristor to realize complex arithmetic operations. figure 1 It is a flow chart of the method provided by the present invention, including: setting the meaning of the logic state of the memristor, setting the structure of the memristor device, designing an implementation plan for complex operations, using the voltage value of the memristor as a logic input to perform Boolean logic operations, using The state of the memristor device is used as a logic input to perform Boolean logic operations, thereby realizing non-volatile complex operations using the memristor.

[0031] The fabrication process of the memristor is as follows:

[0032] The top electrode and bottom electrode of the memr...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for carrying out nonvolatile complex operation by using a memristor and the memristor, and the memristor is used for realizing the arithmetic operation of the complexoperation, and the method comprises the following steps: setting the meaning of a logic state for the memristor; setting a device structure of the memristor; setting two modes for performing Boolean logic operation by using the memristor, and performing configuration for the two modes to realize nonvolatile complex operation, namely performing Boolean logic operation by taking a voltage value of the memristor as logic input and taking a device state of the memristor as logic input; and selecting an optimal implementation scheme, so that the number of devices and operation steps required by thescheme are minimized. A cross array structure is utilized, the method is suitable for large-scale integration, complex operation is efficiently achieved, and the speed and energy consumption bottleneck of a traditional computing architecture can be broken through.

Description

technical field [0001] The invention relates to the technical field of semiconductors and novel non-von Neumann calculations, in particular to a method for performing nonvolatile complex arithmetic operations using a memristor. Background technique [0002] Due to the use of separate storage and computing units, existing traditional computers face multiple challenges such as low performance and high power consumption. The logic unit based on non-volatile memory such as oxide memristor has the characteristics of small size, low power consumption, etc., and can integrate storage and computing functions, which is expected to overcome the von Neumann bottleneck and reduce the energy and time generated by data interaction. expend. Therefore, the use of non-volatile logic devices is expected to break through the speed and energy consumption bottlenecks of traditional computing architectures, thereby promoting the development of a new generation of energy-efficient computing. [...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G06F7/483
CPCG06F7/4833
Inventor 杨玉超李景县黄如
Owner PEKING UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products