Static random access memory unit, static random access memory and electronic device
A static random access, storage unit technology, applied in static memory, digital memory information, information storage, etc., can solve problems such as difficulty, and achieve the effects of improving stability, performance, and eliminating adverse effects
Inactive Publication Date: 2019-10-22
SEMICON MFG INT TIANJIN +1
View PDF7 Cites 4 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
High-speed and low-power SRAM has become an important part of VLSI chips, and is developing towards faster speed, higher integration, and lower power consumption. However, with the characteristics of CMOS (Complementary Metal Oxide Semiconductor) With the continuous reduction of size and working voltage, how to improve the stability of SRAM cell circuit is still very difficult
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0026] SRAM is a kind of static access memory. Its core module is a storage cell array composed of a large number of SRAM cells. The common structure of SRAM cells is as follows figure 1 The six-tube structure shown is composed of four NMOS transistors N1~N4 and two PMOS transistors P1~P2. P1 and N1 form the first inverter, and the gates of P1 and N1 are connected to each other as the second inverter. The input terminal of an inverter, the drain of P1 and the drain of N1 are connected to each other as the output terminal of the first inverter, the source of N1 is grounded, the sources of P1 and P2 are connected to each other, and P2 and N2 form the second Inverter, the gate of P2 and the gate of N2 are connected to each other, as the input terminal of the second inverter, the drain of P2 and the drain of N2 are connected to the output terminal of the second inverter, and the source of N2 is grounded , the output terminal of the second inverter is connected to the input termina...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention provides a static random access memory unit, a static random access memory and an electronic device. In the static random access memory unit, an additional inverter is added between a corresponding transmission gate and a storage node, the output end of the phase inverter is connected with the storage node to invert the output of the phase inverter of which the output end is connected with the storage node again, and then the shaping of the output waveform is realized, so that the potential at a storage node is improved, the adverse effect of noise on an output signal under a lowworking voltage is eliminated, the noise margin of the static random access memory unit is increased, and the stability of the static random access memory unit is improved. The static random access memory and the electronic device provided by the invention are provided with the static random access memory unit provided by the invention, so that the performance is improved.
Description
technical field [0001] The invention relates to the technical field of integrated circuit manufacturing, in particular to a static random access storage unit, a static random access memory and an electronic device. Background technique [0002] With the continuous development of digital integrated circuits, on-chip integrated memory has become an important part of digital systems. SRAM (Static Random Access Memory) is widely used in high-speed storage systems, multimedia technology, cellular phones, image processing, electronic High-tech fields such as communications and speech processing and synthesis. High-speed and low-power SRAM has become an important part of VLSI chips, and is developing towards faster speed, higher integration, and lower power consumption. However, with the characteristics of CMOS (Complementary Metal Oxide Semiconductor) With the continuous reduction of size and operating voltage, how to improve the stability of SRAM unit circuit is still very diff...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): G11C7/10G11C11/417
CPCG11C7/1075G11C11/417
Inventor 孙浩王志鹏
Owner SEMICON MFG INT TIANJIN