A memory based on hysteresis device

Abstract

The invention discloses a memory unit circuit based on a hysteresis characteristic device and an array circuit composed of a plurality of the unit circuits, wherein the memory unit circuit includes: an information storage module, a write operation module and a read operation module, and an information storage module The module includes a write operation terminal and a read operation terminal, which are mainly composed of units with hysteresis characteristics, and use the state of hysteresis characteristics to store information; the write operation module is connected to the write operation terminal, and the connection controls the information stored in the information storage module, and Before the hysteresis characteristic state of the storage unit deviates from the corresponding hysteresis region, the write control circuit can reset it to a certain interval of the hysteresis curve, and the reset operation does not need to obtain the stored information in advance; the read operation module It is connected with the read operation terminal, and the connection obtains the state storage information in the information storage module. The memory implements information storage through a device with hysteresis characteristics, so that no prior read operation is required during refresh, and the refresh operation is simplified.

Description

technical field [0001] The invention relates to the technical field of low-power memory structure, in particular to a memory based on a hysteresis characteristic device, including a unit circuit of the type memory and an array circuit composed of a plurality of the unit circuits. Background technique [0002] At present, with the rise of technologies such as artificial intelligence and the Internet of Things, the continuous increase of the total amount of data makes people's requirements for storage capacity, read and write speed, service life and low power consumption of the memory are also rising. Since dynamic random access memory (DRAM, dynamic random access memory) has the advantages of high storage density and fast read and write speed, most computer systems use DRAM as the main storage part. [0003] DRAM mainly stores information through the charge on the capacitor, and due to the existence of transistor leakage current, the charge stored on the capacitor will gradua...

AI Technical Summary

Problems solved by technology

At present, more mature non-volatile memories include flash memory (Flash), STT-MRAM, ferroelectric memory (FeRAM) and other solutions, but the above-mentioned solutions have disadvantages in write operation delay, write operation power consumption, process stability and compatibility, and device There are certain deficiencies in durability and other aspects, so it cannot completely replace the traditional CMOS memory structure at present.

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