A memory based on hysteretic characteristic device

Abstract

The invention discloses a unit circuit of a memory based on a hysteretic characteristic device and an array circuit composed of a plurality of unit circuits. The memory unit circuit comprises an information storage module, a write operation module and a read operation module, the information storage module comprises a write operation end and a read operation end, is mainly composed of units with hysteretic characteristics, and stores information by utilizing the state of the hysteretic characteristics; the write operation module is connected with the write operation end, the write operation module is connected with information stored in the control information storage module, the write control circuit can reset the hysteresis characteristic state of the storage unit into a certain intervalof a hysteresis curve before the hysteresis characteristic state of the storage unit deviates from the corresponding hysteresis area, and the reset operation does not need to obtain the stored information in advance; the read operation module is connected with the read operation end, and the connection acquires state storage information in the information storage module. According to the memory,information storage is realized through a device with hysteretic characteristics, so that reading operation does not need to be performed in advance during refreshing, and the refreshing operation issimplified.

Description

technical field [0001] The invention relates to the technical field of low-power memory structure, in particular to a memory based on a hysteresis characteristic device, including a unit circuit of the type memory and an array circuit composed of a plurality of the unit circuits. Background technique [0002] At present, with the rise of technologies such as artificial intelligence and the Internet of Things, the continuous increase of the total amount of data makes people's requirements for storage capacity, read and write speed, service life and low power consumption of the memory are also rising. Since dynamic random access memory (DRAM, dynamic random access memory) has the advantages of high storage density and fast read and write speed, most computer systems use DRAM as the main storage part. [0003] DRAM mainly stores information through the charge on the capacitor, and due to the existence of transistor leakage current, the charge stored on the capacitor will gradua...

AI Technical Summary

Problems solved by technology

At present, more mature non-volatile memories include flash memory (Flash), STT-MRAM, ferroelectric memory (FeRAM) and other solutions, but the above-mentioned solutions have disadvantages in write operation delay, write operation power consumption, process stability and compatibility, and device There are certain deficiencies in durability and other aspects, so it cannot completely replace the traditional CMOS memory structure at present.

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