Thin film forming method and substrate processing apparatus
A technology of substrate processing device and thin film, which is applied in measurement devices, volume flow measurement devices, mass flow measurement devices, etc., can solve problems such as consumption of source gas and large reaction by-products of exhaust pipelines.
Active Publication Date: 2019-11-15
ASM IP HLDG BV
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Problems solved by technology
However, when using this method, a much larger amount of source gas than is required in the reaction may be consumed, and a much larger amount of reaction by-products may be produced in the exhaust line, so the exhaust line, exhaust pump and The performance of the scrubber is negatively affected
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[0073] Reference will now be made in detail to embodiments, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to like elements throughout. In this regard, the various embodiments of the invention may have different forms and should not be construed as limited to only those described herein. Accordingly, the embodiments are merely set forth below, by referring to the figures, to explain aspects of the present description.
[0074] Hereinafter, embodiments of the present invention will be explained in detail with reference to the accompanying drawings.
[0075] The embodiments of the present invention are provided to more fully explain the present invention to those skilled in the art, and the embodiments described herein can be changed into many different forms and are not intended to limit the scope of the present invention. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and wil...
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A thin film forming method and a substrate processing apparatus are provided. The thin film forming method includes: a first operation of supplying a source gas at a first flow rate into a reactor; asecond operation of purging the source gas in the reactor to an exhaust unit; a third operation of supplying a reactive gas at a second flow rate into the reactor; a fourth operation of supplying plasma into the reactor; and a fifth operation of purging the reactive gas in the reactor to the exhaust unit, wherein, during the second to fifth operations, the source gas is bypassed to the exhaust unit, and a flow rate of the source gas bypassed to the exhaust unit is less than the first flow rate. According to the thin film forming method, the consumption of the source gas and the reactive gas may be reduced, and the generation of reaction by-products in the exhaust unit may be minimized.
Description
[0001] [Cross-reference to related applications] [0002] This application claims the benefit of U.S. Provisional Application No. 62 / 668,685, filed May 8, 2018, in the United States Patent and Trademark Office, the disclosure of which is incorporated herein by reference in its entirety. technical field [0003] One or more embodiments relate to a thin film forming method and a substrate processing apparatus, and in particular, to a thin film forming method and a thin film forming method capable of reducing consumption of source gas and reaction gas used during a thin film forming process. Substrate handling device. More specifically, one or more embodiments relate to a method that reduces the use of dichlorosilane (DCS; SiH 2 Cl 2 ) method for the consumption of the DCS source in the SiN thin film deposition process of the source. [0004] One or more embodiments also relate to a thin film forming method and a substrate processing apparatus capable of preventing generation ...
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IPC IPC(8): C23C16/34C23C16/455C23C16/52
CPCC23C16/345C23C16/45544C23C16/52H01L21/0217H01L21/02211H01L21/02274H01L21/0228C23C16/45542H01L21/02315H01L21/67017C23C16/45536G01F7/005G01F1/40G01F1/78
Inventor 金永宰金永勋
Owner ASM IP HLDG BV