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Method, device and equipment for storing bad block information of flash memory

A bad block information and storage device technology, applied in the storage field, can solve problems such as long test time, affecting normal mass production efficiency, and cost

Pending Publication Date: 2019-11-19
SHENZHEN DEMINGLI ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] In the existing scheme for storing bad block information of flash memory, when the flash memory needs to be mass-produced again, it is necessary to perform write-read verification on the storage space of the entire NAND Flash to rebuild the bad block information table, which takes a very long test time. Seriously affect the efficiency of normal mass production

Method used

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  • Method, device and equipment for storing bad block information of flash memory
  • Method, device and equipment for storing bad block information of flash memory
  • Method, device and equipment for storing bad block information of flash memory

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Embodiment Construction

[0049] The present invention will be described in further detail below in conjunction with the accompanying drawings and embodiments. In particular, the following examples are only used to illustrate the present invention, but not to limit the scope of the present invention. Likewise, the following embodiments are only some but not all embodiments of the present invention, and all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0050]The present invention provides a method for storing bad block information of flash memory, which can ensure that the bad block information table can find bad blocks in the OTP (One Time Programmable, one-time programmable) storage space when the flash memory data is lost The information table can save the time of rewriting, reading and verifying all blocks of the flash memory and rebuilding the bad block information table when the flash memory ...

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Abstract

The invention discloses a method, a device and equipment for storing bad block information of a flash memory. The method comprises the following steps: adding a one-time programmable storage space into a main control chip of the flash memory, storing a bad block information table of the flash memory into the one-time programmable storage space, and searching the bad block information table from the one-time programmable storage space for re-production of the flash memory when the flash memory needs to be re-produced. By means of the mode, the bad block information table can be found in the one-time programmable storage space under the condition that it can be guaranteed that the bad block information table is lost in flash memory data. The time for rewriting, reading, checking and reconstructing the bad block information table for all blocks of the flash memory when mass production is conducted on the flash memory again can be saved.

Description

technical field [0001] The invention relates to the field of storage technology, in particular to a storage method, device and equipment for bad block information of a flash memory. Background technique [0002] The production process of NAND Flash (flash memory, referred to as flash memory) determines that there are original bad blocks when NAND Flash leaves the factory, and new bad blocks will be generated during the use of NAND Flash due to the erasing and writing times reaching the end of life. Bad block information is usually identified by software through algorithmic scanning during the flash memory production process, and then the good and bad status of all blocks is formed into a bad block information table and stored in NAND Flash. When the software of the main control chip of the flash memory needs to be upgraded, it is necessary to read the bad block information table first, and then perform resource allocation for the storage management algorithm according to the...

Claims

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Application Information

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IPC IPC(8): G06F11/10G06F12/02
CPCG06F11/1068G06F12/0246
Inventor 李虎梁永权
Owner SHENZHEN DEMINGLI ELECTRONICS
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