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Method for calibrating NAND Flash read reference voltage on line in SSD

A technology of reference voltage and calibration voltage, which is applied in the field of memory, can solve problems such as data errors and achieve the effect of improving stability

Inactive Publication Date: 2019-11-19
SHANDONG SINOCHIP SEMICON
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  • Summary
  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

If the reading reference voltage is not suitable, it will also affect the probability of data error

Method used

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  • Method for calibrating NAND Flash read reference voltage on line in SSD
  • Method for calibrating NAND Flash read reference voltage on line in SSD
  • Method for calibrating NAND Flash read reference voltage on line in SSD

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Embodiment 1

[0017] NAND Flash Read operation can be divided into normal read (normal read) and offset read (shift read). Normal read only needs to send the Read command; shift read needs to be set by the Set Feature command before sending the Read command. The reference voltage parameter read this time. The reference voltage parameter represents the read V currently used to read the page ref , different parameters correspond to different V ref . This method utilizes the characteristic that shift read can adjust the reference voltage, and obtains the best reference voltage when reading the current page by using a method of adjusting the reference voltage shift read multiple times, which is used for subsequent reading operations of the page and reduces data occurrence probability of error.

[0018] In this embodiment, a 2-3-2 coded 3D TLC including 256 Wordlines is taken as an example for illustration.

[0019] Since the characteristics of NAND Flash are expressed in units of blocks, al...

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Abstract

The invention discloses a method for calibrating NAND Flash read reference voltage on line in an SSD. According to the method, the characteristics of the NAND Flash are fully considered, an offset reading method is utilized, and the reference voltage of the NAND Flash is scanned on line, so that the stability of data is improved on the premise of not influencing the data content. According to themethod, the influence of online calibration on SSD performance is considered, the offset reading frequency is set, and when the reading frequency reaches a set value and a check error still exists, the block data is moved to a new block.

Description

technical field [0001] The invention relates to a method for calibrating a NAND Flash reading reference voltage, in particular to a method for online calibrating the NAND Flash reading reference voltage in an SSD, and belongs to the technical field of memory. Background technique [0002] At present, SSDs usually use NAND Flash as the storage medium. However, the physical structure of NAND Flash itself determines its inherent instability. There is a probability that data errors will occur during the reading process of NAND Flash, and with the development of NAND Flash technology and types, the probability of errors is on the rise, so the ECC algorithm required by NAND Flash today has stronger and stronger error correction capabilities. However, the ECC algorithm is already a mature algorithm and almost all ECC algorithms in SSDs are implemented by hardware. There is little room for reducing the error probability of NAND Flash by improving the ECC algorithm. [0003] The rea...

Claims

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Application Information

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IPC IPC(8): G11C29/42G11C16/26G11C16/30
CPCG11C16/26G11C16/30G11C29/42
Inventor 刘凯王璞
Owner SHANDONG SINOCHIP SEMICON
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