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Method and device for processing non-volatile memory

A technology of a non-volatile memory and a processing method, applied in the field of a non-volatile memory processing method and device, capable of solving problems such as non-volatile memory programming operations, reduced cell reliability, and cell damage, to achieve reliable and efficient programming Operation, reliability improvement, damage reduction effects

Active Publication Date: 2022-05-24
GIGADEVICE SEMICON XIAN INC +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, the inventor found in the process of studying the above-mentioned technical solution that the above-mentioned technical solution has the following defects: if the above-mentioned fixed programming pulse voltage difference is small, the damage to the cell caused by the programming operation of the NAND memory is small, so that the cell The reliability of the NAND memory is high, but the programming efficiency is low; if the fixed programming pulse voltage difference is large, the programming efficiency is high when programming the NAND memory, but it will cause damage to the cell, resulting in a decrease in cell reliability.
That is, no matter what value the fixed programming pulse voltage difference is set to, a reliable and efficient programming operation of the non-volatile memory cannot be realized.

Method used

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  • Method and device for processing non-volatile memory

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Experimental program
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Effect test

Embodiment 1

[0027] refer to figure 1 , showing a flow chart of a non-volatile memory processing method, which may specifically include the following steps:

[0028] Step 101: Acquire the current programming pulse state in the nonvolatile memory.

[0029] In this embodiment of the present invention, a detection module may be set in the nonvolatile memory, and the current programming pulse state in the nonvolatile memory may be acquired through the detection module. In specific applications, the detection module can obtain the current programming pulse state after each programming pulse is completed, so that after each programming pulse is completed, the current programming pulse state of the non-volatile memory can be known, so as to realize the non-volatile memory. The programming operation of the volatile memory is precisely controlled; the detection module can also obtain the current programming pulse state once after two or more programming pulses are completed, and intermittently lea...

Embodiment 2

[0044] refer to figure 2 , shows a specific flow chart of a non-volatile memory processing method, which may specifically include the following steps:

[0045] Step 201: Obtain the current programming pulse state in the nonvolatile memory; the nonvolatile memory corresponds to the initial programming pulse voltage difference.

[0046] In the embodiment of the present invention, the initial programming pulse voltage difference of the non-volatile memory can be set, and the initial programming pulse voltage difference is: when the adjustment voltage is 0, the difference between the programming voltages corresponding to every two adjacent programming pulses difference. Specifically, when the adjustment voltage is 0, if the programming voltage corresponding to the previous programming pulse is u0, the programming voltage corresponding to the current programming pulse is u1, and the programming voltage corresponding to the next programming pulse is u2, then u1 minus u0 The diffe...

Embodiment 3

[0085] refer to image 3 , showing a block diagram of a non-volatile memory processing device, the device may specifically include:

[0086] The current programming pulse state obtaining module 310 is used to obtain the current programming pulse state in the non-volatile memory;

[0087] an adjustment voltage determination module 320, configured to determine an adjustment voltage according to the current programming pulse state;

[0088] a first voltage determination module 330, configured to determine the first voltage corresponding to the current programming pulse;

[0089] A second voltage determination module 340, configured to determine a second voltage corresponding to the next programming pulse according to the adjustment voltage and the first voltage;

[0090] The programming module 350 is configured to perform a programming operation according to the second voltage in the next programming pulse.

[0091] Preferably, refer to Figure 4 ,exist image 3 On the basis...

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Abstract

The embodiment of the present invention provides a non-volatile memory processing method and device, the method comprising: acquiring the current programming pulse state in the non-volatile memory; determining the regulation voltage according to the current programming pulse state; determining the current programming pulse corresponding the first voltage; according to the adjustment voltage and the first voltage, determine the second voltage corresponding to the next programming pulse; in the next programming pulse, perform the programming operation according to the second voltage. In the embodiment of the present invention, the second voltage is determined according to the current actual programming situation of the non-volatile memory, and the programming operation is performed according to the second voltage in the next programming pulse, which can realize the whole programming process of the non-volatile memory. , for reliable and efficient programming operations.

Description

technical field [0001] The present invention relates to the technical field of memory processing, and in particular, to a non-volatile memory processing method and device. Background technique [0002] With the development of various electronic devices and embedded systems, non-volatile memory devices are widely used in electronic products. Take non-volatile memory NAND flash memory as an example. NAND memory is composed of multiple storage cells (cells), which can realize multiple programming, large capacity, simple reading and writing, few peripheral devices, and low price. [0003] In the prior art, when a programming operation (ie, a write operation) is performed on a NAND memory, the programming process usually corresponds to a plurality of programming pulses, and initially the voltage corresponding to the programming pulse is the initial voltage. The voltage will be based on the initial voltage and gradually increase according to the fixed programming pulse voltage di...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/10G11C16/30G11C16/34
CPCG11C16/10G11C16/30G11C16/3404
Inventor 马思博陈飞舒清明
Owner GIGADEVICE SEMICON XIAN INC