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Nonvolatile memory processing method and device

A non-volatile memory, voltage regulation technology, applied in static memory, read-only memory, information storage, etc., can solve the problems of non-volatile memory programming operation, low programming efficiency, cell damage, etc.

Active Publication Date: 2019-12-31
GIGADEVICE SEMICON XIAN INC +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the inventor found in the process of studying the above-mentioned technical solution that the above-mentioned technical solution has the following defects: if the above-mentioned fixed programming pulse voltage difference is small, the damage to the cell caused by the programming operation of the NAND memory is small, so that the cell The reliability of the NAND memory is high, but the programming efficiency is low; if the fixed programming pulse voltage difference is large, the programming efficiency is high when programming the NAND memory, but it will cause damage to the cell, resulting in a decrease in cell reliability.
That is, no matter what value the fixed programming pulse voltage difference is set to, a reliable and efficient programming operation of the non-volatile memory cannot be realized.

Method used

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  • Nonvolatile memory processing method and device

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Experimental program
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Embodiment 1

[0027] refer to figure 1 , which shows a flow chart of a non-volatile memory processing method, which may specifically include the following steps:

[0028] Step 101: Obtain the current data programming status in the non-volatile memory.

[0029] In the embodiment of the present invention, a detection module can be set in the non-volatile memory, and the current data programming state in the non-volatile memory can be obtained through the detection module. In a specific application, the detection module can obtain the current data programming state once after each programming pulse is completed, so that after each programming pulse is completed, the current data programming state of the non-volatile memory can be known, so as to realize the non-volatile memory. The programming operation of the volatile memory is precisely controlled; the detection module can also obtain the current data programming state once after two or more programming pulses are completed, and intermitten...

Embodiment 2

[0044] refer to figure 2 , which shows a specific flow chart of a non-volatile memory processing method, which may specifically include the following steps:

[0045] Step 201: Obtain the current data programming state in the non-volatile memory; the non-volatile memory corresponds to the initial programming pulse voltage difference.

[0046] In the embodiment of the present invention, the initial programming pulse voltage difference of the non-volatile memory can be set, and the initial programming pulse voltage difference is: when the adjustment voltage is 0, the programming voltage corresponding to every two adjacent programming pulses difference. Specifically, when the adjustment voltage is 0, if the programming voltage corresponding to the previous programming pulse is u0, the programming voltage corresponding to the current programming pulse is u1, and the programming voltage corresponding to the next programming pulse is u2, then u1 minus u0 The difference is the init...

Embodiment 3

[0085] refer to image 3 , showing a block diagram of a non-volatile memory processing device, the device may specifically include:

[0086] The current data programming state acquisition module 310 is used to obtain the current data programming state in the non-volatile memory;

[0087] An adjustment voltage determination module 320, configured to determine an adjustment voltage according to the current data programming state;

[0088] A first voltage determining module 330, configured to determine a first voltage corresponding to the current programming pulse;

[0089] The second voltage determination module 340 is configured to determine a second voltage corresponding to the next programming pulse according to the adjustment voltage and the first voltage;

[0090] The programming module 350 is configured to perform a programming operation according to the second voltage in the next programming pulse.

[0091] Preferably, refer to Figure 4 ,exist image 3 On the basis ...

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Abstract

Embodiments of the invention provide a nonvolatile memory processing method and device. The method comprises the steps of obtaining a current data programming state in a nonvolatile memory; determining an adjusting voltage according to the current data programming state; determining a first voltage corresponding to the current programming pulse; determining a second voltage corresponding to a nextprogramming pulse according to the adjusting voltage and the first voltage; and in the next programming pulse, carrying out programming operation according to the second voltage. In the embodiment ofthe invention, the second voltage is determined according to the current actual programming condition of the nonvolatile memory, and programming operation is carried out in the next programming pulseaccording to the second voltage, so that reliable and efficient programming operation can be carried out in the whole programming process of the nonvolatile memory.

Description

technical field [0001] The present invention relates to the technical field of memory processing, in particular to a nonvolatile memory processing method and device. Background technique [0002] With the development of various electronic devices and embedded systems, non-volatile memory devices are widely used in electronic products. Take the non-volatile memory NAND Flash Memory (NAND Flash Memory) as an example. The NAND memory is composed of multiple storage cells (cells), which can be programmed multiple times, has a large capacity, is easy to read and write, has few peripheral devices, and is low in price. [0003] In the prior art, when performing a programming operation (that is, a writing operation) on a NAND memory, the programming process usually corresponds to a plurality of programming pulses, and the voltage corresponding to the programming pulse at the beginning is the initial voltage. As the programming operation progresses, each programming pulse corresponds...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/30G11C16/34
CPCG11C16/30G11C16/34
Inventor 马思博罗啸陈春晖王者伟
Owner GIGADEVICE SEMICON XIAN INC