Unlock instant, AI-driven research and patent intelligence for your innovation.

Three-dimensional integrated circuit power supply network and its forming method

A technology of integrated circuits and power networks, applied in circuits, electrical components, electrical solid devices, etc., can solve problems such as loss, signal loss voltage, etc.

Active Publication Date: 2022-02-22
TAIWAN SEMICON MFG CO LTD
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, when the signal provided by the power supply is received by a circuit on a semiconductor die, the signal provided by the power supply will be lost (ie, voltage loss)
Voltage loss can occur due at least to the resistance of a signal from a power supply to a conductive path in a circuit

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Three-dimensional integrated circuit power supply network and its forming method
  • Three-dimensional integrated circuit power supply network and its forming method
  • Three-dimensional integrated circuit power supply network and its forming method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0063] Many different embodiments, or examples, of the disclosure are of different features for implementing embodiments of the disclosure. Specific examples of components and configurations are described below to simplify embodiments of the disclosure. Of course, this is just an example and not intended to be limiting. For example, the formation of the first feature on or over the second feature in the following description may include the embodiment that the first feature is formed in direct contact with the second feature, and may also include the possible formation between the first feature and the second feature. Additional features, such that the first feature and the second feature are not in direct contact with the embodiment. Additionally, numerals and / or letters may be repeatedly referenced in various instances of the present disclosure. This repetition is for simplicity and clarity and does not in itself dictate a relationship between the various embodiments and / o...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present disclosure relates to a three-dimensional integrated circuit power grid and its forming method. A three-dimensional integrated circuit power supply network, which includes a first integrated circuit grain, a second integrated circuit grain, an interface and a power distribution structure. An interface may be disposed between the first integrated circuit die and the second integrated circuit die. A power distribution structure can be connected to the interface. The power distribution structure may include at least one silicon via and a ladder structure connecting the at least one silicon via.

Description

technical field [0001] The present disclosure relates to an integrated circuit power network and a method for forming the same. Background technique [0002] A vertically stacked integrated circuit stacks multiple semiconductor dies on top of each other and vertically interconnects them using, for example, through-silicon vias (TSVs). Vertically stacked ICs can perform the same with a smaller footprint than a device constructed from a single IC. [0003] In some cases, the power used by circuits on a semiconductor die can vary over time. In addition, when the signal provided by the power supply is received by a circuit on a semiconductor die, the signal provided by the power supply suffers loss (ie, voltage loss). Voltage loss can occur due at least to the resistance of a signal from a power supply to a conductive path in a circuit. Contents of the invention [0004] An embodiment of the present disclosure provides a three-dimensional integrated circuit power network, i...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/48H01L23/498H01L23/528H01L23/535H01L25/07
CPCH01L23/481H01L23/49827H01L23/49838H01L23/5283H01L23/535H01L25/071H01L23/5286H01L24/08H01L2224/80895H01L2224/80894H01L2224/80357H01L2224/05096H01L2224/94H01L24/80H01L2224/05008H01L2224/05569H01L25/50H01L25/0657H01L2225/06517H01L2225/06513H01L2225/06541H01L2224/08145H01L23/585H01L24/14H01L27/0688H01L2224/0401H01L2224/1403H01L2224/14181H01L2224/16145H01L2924/00014H01L2224/80001H01L23/538H01L24/06H01L24/30H01L25/073H01L21/8221H01L24/17
Inventor 诺·穆罕默德·艾杜维蒂尔张丰愿黄博祥刘钦洲
Owner TAIWAN SEMICON MFG CO LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com