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Method for testing cellular characteristics of thyristor

A test method and thyristor technology, applied in the direction of single semiconductor device test, measurement power, measurement device, etc., can solve the problem of no circular movement test method, etc., and achieve the effect of efficient detection and screening

Active Publication Date: 2020-03-27
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In the existing technology, most of them move in the x and y directions. For the cells distributed in a circle on the surface of the gate commutation turn-off thyristor, there is no circular movement test method for the time being.

Method used

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  • Method for testing cellular characteristics of thyristor
  • Method for testing cellular characteristics of thyristor
  • Method for testing cellular characteristics of thyristor

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Embodiment Construction

[0047] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention more clear, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0048] The invention mainly performs high-efficiency detection and screening for the characteristics of cells distributed circularly on the surface of the gate commutation shutdown thyristor. Such as figure 1 shows an overall flow chart of a test according to an embodiment of the present invention, such as figure 1 As shown,...

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Abstract

The invention provides a method for testing the cellular characteristics of a thyristor. The method comprises the following steps of: aligning and correcting the thyristor; moving the thyristor to a test starting position; controlling a probe of a test board to move downwards to be in contact with a cathode of the thyristor cell; detecting the characteristics of the cells; carrying out secondary detection on the bad cells; generating test results. Annular displacement is realized, and the thyristor cell can be efficiently detected and screened.

Description

technical field [0001] The invention relates to the technical field of power semiconductor device testing, in particular to a thyristor cell characteristic testing method. Background technique [0002] The gate commutation turn-off thyristor is a special power device after the gate and cathode layout of the traditional thyristor is specially designed and the vertical structure is adjusted. commutation turn-off thyristor device) many small cells distributed in a ring on the surface, each of the cell cathode and the gate area next to the cell can be regarded as an independent micro thyristor, and all these cells are connected in parallel relationship, only when all the cells are guaranteed to have normal characteristics can the normal operation of the entire device be satisfied. [0003] The gate commutation turn-off thyristor has a series of advantages such as low on-state loss, strong current turn-off capability, and failure to enter short-circuit mode. As a power semicondu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/26
CPCG01R31/263
Inventor 周文鹏曾嵘刘佳鹏吕纲余占清赵彪陈政宇
Owner TSINGHUA UNIV