Unlock instant, AI-driven research and patent intelligence for your innovation.

Apparatus and method for pumping gases from chamber

A technology for exhausting gases and chambers, which is applied in electrical components, gaseous chemical plating, semiconductor/solid-state device manufacturing, etc., and can solve the problems of no pumping device and pumping pipeline.

Pending Publication Date: 2020-03-31
TAIWAN SEMICON MFG CO LTD
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

There is no effective solution to keep pumping devices and pumping lines clean and free from blockages

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Apparatus and method for pumping gases from chamber
  • Apparatus and method for pumping gases from chamber
  • Apparatus and method for pumping gases from chamber

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0040] The following disclosure describes a number of different exemplary embodiments for implementing the various features of the present disclosure. The following disclosure describes specific examples of various components and their arrangements to simplify the description. Of course, these specific examples are not intended to be limiting. For example, if the disclosure describes that a first feature is formed on or over a second feature, it means that it may include an embodiment in which the above-mentioned first feature is in direct contact with the above-mentioned second feature, and may also include additional features. Embodiments in which a feature is formed between the first feature and the second feature such that the first feature and the second feature may not be in direct contact. In addition, the same reference signs and / or symbols may be reused in different examples in the following publications. These repetitions are for simplicity and clarity and are not ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

Apparatus and methods for pumping gases from a chamber are disclosed. In one example, an apparatus for evacuating gases from a chemical vapor deposition (CVD) chamber is disclosed. The apparatus includes: a housing including an internal surface and at least one inlet in fluid communication with the CVD chamber; and a coating on the internal surface. The coating is configured to make the internal surface hydrophobic.

Description

technical field [0001] Embodiments of the present disclosure relate to an apparatus and method for exhausting gas from a chamber. Background technique [0002] Semiconductor integrated circuit wafers are produced through a number of manufacturing processes, which may include, for example, thermal oxidation, diffusion, ion implantation, rapid thermal processing (RTP), chemical vapor deposition (chemical vapor deposition, CVD), Physical vapor deposition (chemical vapor deposition, PVD), epitaxy, etching, lithography, etc. As part of a typical manufacturing process, such as a chemical vapor deposition process, selected gases are input into a reaction chamber used to form a thin film on a substrate. This thin film is deposited not only on the substrate, but also on the walls of the reaction chamber and other exposed surfaces. The gas is then pumped out of the reaction chamber into a pumping device, such as a vacuum pump. But because only a small fraction of the gas input into...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/67C23C16/44
CPCC23C16/4408H01L21/67017C09D5/1681C23C16/4404C23C16/4412C23C16/45544
Inventor 黄逢志
Owner TAIWAN SEMICON MFG CO LTD