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A kind of superlattice memristor functional layer material, memristor unit and preparation method thereof

A technology of memristor and superlattice, which is applied in the field of superlattice memristor and its preparation, can solve the problem of limiting the storage capacity of memristor memory chips, restricting the research of peripheral circuits of artificial neural network chips, and the linearity of synapse characteristics To improve stability and consistency, continuously adjust synaptic characteristics, and improve synaptic linearity

Active Publication Date: 2022-06-07
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This severely limits the storage capacity of memristor memory chips, and also poses great challenges to the large-scale integration and circuit design of memristors.
On the other hand, in the field of modern brain-inspired neuromorphic computing, memristors, as synaptic element conductive filaments, will lead to a sudden increase in the conductance of the device at the moment of formation of the dielectric layer, which is not in line with the expected conductance of memristors in brain-inspired simulations. The requirement of continuously changing with the external electric field, the linearity of the synaptic characteristics is generally poor, which also seriously restricts the research on the peripheral circuits of the artificial neural network chip, which not only increases the design cost, but also increases the circuit area

Method used

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  • A kind of superlattice memristor functional layer material, memristor unit and preparation method thereof
  • A kind of superlattice memristor functional layer material, memristor unit and preparation method thereof
  • A kind of superlattice memristor functional layer material, memristor unit and preparation method thereof

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preparation example Construction

[0061] Specifically, in the above-mentioned memristor cell, a specific external excitation / SET operation is applied to set a logic 1, and when an opposite external excitation is applied, the / RESET operation is a logic 0. The logic sequence and data storage can be realized by applying a certain logic circuit to the above-mentioned memristor unit to control the on-off of the oxygen vacancy conductive wire. In the present invention, a preparation method of the above-mentioned superlattice memristor is also provided, comprising the following steps:

[0062] Step 1: prepare the first electrode 2 on the substrate 1 by using the physical vapor deposition method;

[0063] Step 2: Use the atomic layer deposition method to prepare the superlattice memristor functional layer 3 on the first electrode 2 in step 1; A first metal oxide layer 4, and then a second metal oxide layer 5 of 1-3 atomic layers is prepared on the first metal oxide layer 4, and this cycle is repeated until the super...

Embodiment

[0070]The invention is further explained below with reference to the schematic examples shown in the accompanying drawings. The advantages of various aspects of the present invention will become more apparent from the following description. The same reference numbers in the figures refer to the same parts. The shapes and sizes of the components in the schematic drawings are for illustration only, and should not be considered to represent actual shapes, sizes and absolute positions.

[0071] This embodiment provides a HfO 2 / Al 2 O 3 The superlattice memristor, the schematic diagram of which is shown in figure 1 As shown, from bottom to top, it mainly includes a substrate 1 , a first electrode 2 , a superlattice memristor functional layer 3 and a second electrode 6 . Specific steps are as follows:

[0072] Step 1: Preparation of the first electrode 2:

[0073] In the embodiment, TiN is selected as the first electrode 2, and a layer of the first electrode 2 is grown on th...

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Abstract

The invention provides a superlattice memristor functional layer material, a memristor unit comprising the superlattice memristor functional layer and a preparation method thereof, wherein the superlattice memristor functional layer material is at least A stacked structure is formed by alternately stacking the first metal oxide layer and the second metal oxide layer in the first plane direction. The invention utilizes the difference in migration barriers of oxygen ions of two binary metal oxides, so that under certain conditions, the resistance state of the memristor can be stably and slowly changed, and the modulation effect on the on-off of the oxygen vacancy conductive filament is realized. Improved stability and consistency of memristors. In addition, the conductance of the memristor can change continuously with the applied electric field, which realizes the synaptic characteristics of continuously adjustable conductance and improves the linearity of brain-like neuromorphic computing synapses. It is of great significance for the hardware implementation of storage fusion computing and neuromorphic computing.

Description

technical field [0001] The invention belongs to the technical field of microelectronic devices, and more particularly, relates to a superlattice memristor and a preparation method thereof. Background technique [0002] Memristors are considered to be the fourth passive basic circuit element besides resistance, capacitance, and inductance. The resistance of the memristor changes with the amount of charge flowing through it, and can maintain its resistance state when the current is turned off, thus enabling non-volatile information storage. After studying the non-volatile information storage function of memristor, it can be applied to high-density information storage or non-volatile state logic operation. In addition, some memristors have the characteristic of continuously tunable conductance, so that they can also be used as synaptic devices for brain-like neuromorphic computing. Memristors enable the fusion of storage and computation in a single device, making them one of ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00
CPCH10N70/883H10N70/041H10N70/8833
Inventor 王兴晟王成旭缪向水
Owner HUAZHONG UNIV OF SCI & TECH