Chamber seal assembly and growth furnace

Abstract

The invention provides a chamber sealing assembly and a growth furnace. The chamber sealing assembly is arranged around a furnace flange and a reaction chamber, and includes: a sealing ring; and a sealing spacer ring, the axial direction of the sealing spacer ring is Both sides are provided with sealing rings, which are used to separate and support the sealing rings; and, a first air extraction channel is arranged in the sealing spacer ring, and the first end and the second end of the first air extraction channel are respectively located in the sealing spacer ring. On the inner peripheral wall and the outer peripheral wall; a second air extraction channel is arranged in the furnace flange, the first end of the second air extraction channel is connected with the second end of the first air extraction channel; the second end of the second air extraction channel For connection to the extraction device. The chamber sealing assembly provided by the present invention can not only prevent air from leaking into the reaction chamber, but also can improve the efficiency of chamber disassembly and maintenance, and avoid the existing risk of damaging the reaction chamber.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a chamber sealing assembly and a growth furnace. Background technique [0002] Silicon carbide (SiC) single crystal has excellent semiconductor physical properties such as high thermal conductivity, high breakdown voltage, high carrier mobility, and high chemical stability, and can be made into high-frequency, High-power electronic devices and optoelectronic devices have great application value in the fields of national defense, high technology, industrial production, power supply, and transformation, and are regarded as the third-generation wide-bandgap semiconductor materials with great development prospects. [0003] The growth of silicon carbide single crystal materials requires special process equipment. The process equipment mainly includes growth furnace components, heating components, gas components and control components, among which the growth furnace compone...

AI Technical Summary

Problems solved by technology

However, during installation, air will be sealed between the two sealing rings. After the reaction chamber 1 is vacuumed, the vacuum inside the chamber is relatively high. There is a large difference in the indoor pressure. It is inevitable that a very small amount of air sealed in the space between the two sealing rings will leak into the chamber, which will lead to an increase in the pressure rise rate of the chamber and affect the development of the crystal growth process.

At the same time, since the pressure of the interval between the two sealing rings is lower than the external atmospheric pressure, the interval is in a negative pressure state during chamber dismantling maintenance, which makes it difficult to remove the furnace flange, and there is a risk of damaging the reaction chamber

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