Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for positioning failure point of memory

A positioning method and failure point technology, applied in static memory, instruments, etc., can solve the problems of low accuracy and reduce the success rate of failure analysis work, etc., and achieve the effect of improving positioning accuracy and simple positioning method

Active Publication Date: 2020-04-24
YANGTZE MEMORY TECH CO LTD
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the existing failure analysis methods have low accuracy in locating failure points, which seriously reduces the success rate of failure analysis work.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for positioning failure point of memory
  • Method for positioning failure point of memory
  • Method for positioning failure point of memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] The specific implementation of the method for locating memory failure points provided by the present invention will be described in detail below in conjunction with the accompanying drawings.

[0024] figure 1 is a cutaway schematic of an existing memory, see figure 1 The 3D NAND bonding (bonding) memory includes a support layer 10 and a device layer 11 disposed on the support layer 10 . Performing failure analysis on memory is generally performing failure analysis on device layer 11. When performing failure analysis on the device layer 11, it is necessary to locate the failure point. Generally, the failure point of the device layer 11 is located by the method of grabbing points on the back side and grabbing points on the front side. The backside grasping point is to locate the failure point of the device layer 11 from the side of the supporting layer 10. The disadvantage is that the supporting layer 10 will block the positioning signal (such as a laser signal or an ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a method for positioning a failure point of a memory, which comprises the following steps of: preliminarily positioning the failure point to obtain an initial position of the failure point; calibrating an area where the initial position of the failure point is located as a target area; removing the metal layer on the surface of the target area; and positioning the failure point again to obtain the final position of the failure point. The method for positioning the failure point of the memory is simple and feasible, and the positioning accuracy of the failure point is greatly improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for locating memory failure points. Background technique [0002] As technology develops, the semiconductor industry is constantly seeking new ways to produce a greater number of memory cells per memory die in a memory device. In non-volatile memory, such as NAND memory, one way to increase the memory density is by using vertical memory arrays, that is, 3D NAND (three-dimensional NAND) memory; 32 layers developed to 64 layers, or even higher layers. [0003] Failure analysis of memory after design and manufacture is an important means to improve the yield of memory and improve the reliability and stability of process technology. However, the existing failure analysis methods have low accuracy in locating failure points, which seriously reduces the success rate of failure analysis. [0004] Therefore, how to improve the accuracy of failure point location in t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G11C29/56G11C29/04
CPCG11C29/56G11C29/04
Inventor 徐静王君易刘慧丽卜丽丽
Owner YANGTZE MEMORY TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com