A deep ultraviolet vertical cavity semiconductor laser epitaxial structure and preparation method

An epitaxial structure, vertical cavity technology, applied in semiconductor lasers, lasers, laser parts and other directions, can solve the problems of long laser adjustment time, poor laser mechanical properties and thermal stability, etc.

Active Publication Date: 2021-06-15
HAINAN NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the existing vertical surface-emitting lasers for pumping take a long time to adjust, and the mechanical properties and thermal stability of the lasers are poor
And, so far, there is no deep ultraviolet AlN / Al with a wavelength of 210nm x N y Emergence of quantum well vertical cavity semiconductor laser epitaxial structure

Method used

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  • A deep ultraviolet vertical cavity semiconductor laser epitaxial structure and preparation method
  • A deep ultraviolet vertical cavity semiconductor laser epitaxial structure and preparation method
  • A deep ultraviolet vertical cavity semiconductor laser epitaxial structure and preparation method

Examples

Experimental program
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Effect test

Embodiment 1

[0057] The epitaxial structure of the deep ultraviolet semiconductor laser: including a thickness of 640 μm and a doping concentration of 3E18cm -3 N-type single crystal substrate 2; N-type transition layer 3 (thickness is 200nm, Al x N y x / y=1-0.95 in the material, x / y value changes gradually with thickness), lower DBR reflector layer 4 (down DBR reflector layer is 80 pairs, every pair of DBR reflector layer comprises DBR reflector high refractive index layer and the low refractive index layer of the DBR mirror, the thickness of the high refractive index layer in the lower DBR mirror is 51nm, and the material is Al x N y , where, x / y=1.05; the thickness of the low refractive index layer in the lower DBR mirror is 48nm, and the material is Al x N y , wherein, x / y=0.9), lower waveguide layer 5 (thickness is 0.15μm, Al x N y x / y=0.75 in the material), lower barrier layer 6 (thickness is 30nm, Al x N y x / y=0.85 in the material), quantum well layer 7 (thickness is 2nm), up...

Embodiment 2

[0078] The epitaxial structure of the deep ultraviolet semiconductor laser: including a thickness of 640 μm and a doping concentration of 3E18cm -3 N-type single crystal substrate 2; N-type transition layer 3 (thickness is 200nm, Al x N y x / y=1-0.95 in the material, x / y value gradually changes with thickness), lower DBR reflector layer 4 (the lower DBR reflector layer is 120 pairs, and each pair of DBR reflector layer includes DBR reflector high refractive index layer and the low refractive index layer of the DBR mirror, the thickness of the high refractive index layer in the lower DBR mirror is 51nm, and the material is Al x N y , where, x / y=1.05; the thickness of the low refractive index layer in the lower DBR mirror is 48nm, and the material is Al x N y , wherein, x / y=0.9), lower waveguide layer 5 (thickness is 0.15μm, Al x N y x / y=0.75 in the material), lower barrier layer 6 (thickness is 30nm, Al x N y x / y=0.85 in the material), quantum well layer 7 (thickness is ...

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Abstract

The invention discloses an epitaxial structure of a deep ultraviolet vertical cavity semiconductor laser, comprising: a substrate, the substrate is an N-type substrate; an N-type transition layer, a lower DBR mirror layer, and a lower waveguide are sequentially grown on the upper surface of the substrate Layer, lower barrier layer, quantum well layer, upper barrier layer, upper waveguide layer, upper DBR reflector layer and P-type heavily doped layer; P-face electrode set on the upper surface of P-type heavily doped layer; and An N-face electrode provided on the lower surface of the substrate. The laser in the present invention has high optical-to-electrical conversion rate, narrow spectral width, high power, high working stability, good reliability, simple structure and small volume.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronics, and more specifically relates to an epitaxial structure of a deep ultraviolet vertical cavity semiconductor laser and a preparation method thereof. Background technique [0002] At present, the commonly used all-solid-state frequency doubling lasers often use linear cavities. During the frequency doubling process, the second harmonic will pass through the gain medium, which will increase the thermal effect of the gain medium and affect the stability and output power of the laser output beam. In order to reduce the thermal effect of the gain medium, the gain medium is generally cooled by TEC, and when the gain medium is cooled by TEC, it is inevitable to introduce a complicated refrigeration circuit system, which makes the structure of the device complicated. [0003] Vertical-cavity surface-emitting lasers are one of the most popular topics in the field of optoelectronics. C...

Claims

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Application Information

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Patent Type & AuthorityPatents(China)
IPC IPC(8): H01S5/183
CPCH01S5/183
Inventor乔忠良赵志斌李再金任永学李林曲轶
OwnerHAINAN NORMAL UNIV