Monolithic integrated multi-wavelength semiconductor mode-locked laser
A technology of mode-locked lasers and semiconductors, which is applied in the direction of semiconductor lasers, lasers, laser components, etc., can solve problems such as synchronization and device packaging difficulties, and achieve the effects of cost reduction, strong anti-dispersion ability, and small size
Active Publication Date: 2017-10-03
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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However, in the existing implementation schemes, it is just a simple parallel combination of multiple mode-locked lasers. Each passive mode-locked laser can only work independently, and the channels cannot be synchronized through a simple RF source drive, and such a simple arrangement forms The array laser output needs to be coupled with ribbon fiber, which brings great difficulties to device packaging
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[0020] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.
[0021] see figure 1 , 2 , 3, and 4, the embodiment of the present invention proposes a monolithic integrated multi-wavelength semiconductor mode-locked laser operating in the 1550nm communication band, which includes a group of semiconductor optical amplifier arrays 1; phase modulator array 2 ; Phase delay waveguide array 3; Arrayed waveguide grating 4; Saturable absorber 5, they are all integrated on the same substrate through dry etching process. The multi-wavelength semiconductor mode-locked laser proposed by the present invention can also work in other arbitrary bands other than the 1550nm communication band, as long as the semiconductor gain material can provide enough gain in this band. The substrate material may ...
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The invention discloses a design scheme of a monolithic integrated multi-wavelength semiconductor mode-locked laser. This solution integrates a set of semiconductor optical amplifier (SOA) active arrays, phase modulator (PM) arrays, phase delay waveguide arrays (Delay Lines), and array waveguide gratings (AWG) on the same semiconductor substrate through dry etching process. and a saturable absorber (SA). Among them, the SOA active array provides gain for each wavelength channel, and controls the output power of the lasing wavelength by controlling the current injected into the SOA; AWG mainly plays the role of mode selection and multiplexing of different wavelengths; SA realizes passive mode locking or hybrid locking mold.
Description
technical field [0001] The invention belongs to the technical field of semiconductor optoelectronics, and relates to a semiconductor mode-locked laser capable of realizing stable multi-wavelength mode-locked pulse output. It can be widely used in wavelength division-time division multiplexing system, optical access network, optical information processing and so on. Background technique [0002] High repetition frequency multi-wavelength short-pulse light source is a key technology in future ultra-large-capacity optical communication networks. No matter in the current core network based on wavelength division multiplexing (WDM) technology, or in the next generation core network based on optical time division multiplexing (OTDM-WDM) hybrid architecture and optical passive access network (OTDM-WDM) PON), this technology has a wide range of important applications. In the traditional WDM system, in order to achieve large-capacity information transmission, it is necessary to sen...
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IPC IPC(8): H01S5/065
Inventor 刘松涛张希林陆丹张瑞康吉晨王圩
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI