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A spice simulation method for tft threshold voltage drift

A technology of threshold voltage drift and simulation method, which is applied in the direction of design optimization/simulation, etc., can solve problems such as drift and TFT threshold voltage drift, and achieve reliable design results

Active Publication Date: 2021-10-22
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, it will cause the threshold voltage of TFT to drift within a certain range
In addition, in the semiconductor thin film, new defect states generated under the action of external factors will also cause the drift of the TFT threshold voltage to a certain extent.

Method used

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  • A spice simulation method for tft threshold voltage drift
  • A spice simulation method for tft threshold voltage drift
  • A spice simulation method for tft threshold voltage drift

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Embodiment Construction

[0014] In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the accompanying drawings required in the embodiments. Obviously, the accompanying drawings in the following description are only some of the present invention. Embodiments, for those of ordinary skill in the art, other drawings can also be obtained according to these drawings without paying creative labor.

[0015] The SPICE simulation method for thin film transistor (TFT) threshold voltage drift provided by the present invention is further described as follows:

[0016] Such as figure 1 The N-type TFT shown in and figure 2 The transfer characteristic curve of the P-type TFT shown in , when electrons or holes are captured at or near the interface between the gate insulating layer and the semiconductor film, threshold voltage shifts similar to those shown in curves (1) and (4) appear. To model such phenomena, s...

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Abstract

The invention belongs to the technical field of liquid crystal display panels, and in particular relates to a SPICE simulation method for TFT threshold voltage drift. In the present invention, on the basis of the existing TFT SPICE simulation model, a sub-circuit composed of a capacitor C and a resistor R is connected in parallel. During the simulation, a controlled voltage source is added to the gate G of the TFT, thereby realizing the threshold voltage of the TFT device Modeling and simulation of drift phenomena. The simulation result of the invention can be used to judge the influence of the drift of the transfer characteristic curve of the TFT device on the display quality of the liquid crystal panel, and the brightness and lifespan of the display OLED, so that the design of the flat panel display is more reliable.

Description

technical field [0001] The invention belongs to the technical field of liquid crystal display panels, and in particular relates to a SPICE simulation method for TFT threshold voltage drift. [0002] Modeling and simulation of TFT devices used in AMOLED display panels and other display panel manufacturing fields that use TFTs as drive and internal circuit components. In particular, it involves SPICE modeling and simulation when TFT itself has threshold voltage drift. Background technique [0003] In the Array of active matrix liquid crystal (AMLCD) display panels, active matrix OLED display panels, and other display panels that use TFTs as drivers and internal circuit components, it is used for driving each sub-pixel and semiconductor devices that constitute the panel GOA drive circuit It is a thin film transistor (TFT). The characteristics of TFT devices are critical to panel quality. In panel design, it is necessary to establish a SPICE model for TFTs within a certain si...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F30/20
Inventor 刘文军雷东丁士进张卫
Owner FUDAN UNIV