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Electrostatic chuck device

An electrostatic chuck and electrostatic technology, applied in the direction of the holding device, positioning device, circuit, etc. that apply electrostatic attraction, can solve the problems of the uniformity of the etching speed and the etching direction, and achieve the effect of reducing the unevenness of the etching

Pending Publication Date: 2020-05-05
SUMITOMO OSAKA CEMENT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the in-plane etching rate and the uniformity of the etching direction of the wafer of the plasma etching apparatus may decrease.

Method used

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no. 1 Embodiment approach

[0072] Hereinafter, a first embodiment of the present invention will be described in detail with reference to the drawings. figure 1 It is a sectional view showing an example of the electrostatic chuck device 1 according to this embodiment. figure 2 It is a plan view showing an example of electrodes of the electrostatic chuck device 1 according to this embodiment. The electrostatic chuck device 1 includes an electrostatic chuck unit 2 , an insulating adhesive layer 3 , and a cooling base 4 .

[0073] Here, the coordinate system fixed to the electrostatic chuck device 1 is assumed to be a three-dimensional orthogonal coordinate system X, Y, and Z. Here, the X-axis of the three-dimensional orthogonal coordinate system X, Y, and Z is oriented parallel to the horizontal direction, and the Z-axis is oriented vertically upward. The upward direction refers to the positive orientation of the Z axis.

[0074] When the electrostatic chuck device 1 is viewed from above, the electrost...

no. 2 Embodiment approach

[0168] Hereinafter, a second embodiment of the present invention will be described in detail with reference to the drawings.

[0169] In the first embodiment described above, a case has been described in which the electrostatic chuck device includes the electrostatic chuck unit 2 having concavo-convex portions on the side of the insulating adhesive layer, and the electrostatic capacity of the electrostatic chuck unit is adjusted. In this embodiment, a case will be described in which the electrostatic chuck device includes a dielectric layer provided between the electrostatic chuck unit and the cooling base and adjusts the capacitance of the electrostatic chuck unit.

[0170] The electrostatic chuck device according to this embodiment is shown as an electrostatic chuck device 201 .

[0171] Figure 6 It is a sectional view showing an example of the electrostatic chuck device 201 according to this embodiment. The electrostatic chuck device 201 includes an electrostatic chuck u...

no. 3 Embodiment approach

[0198] Hereinafter, a third embodiment of the present invention will be described in detail with reference to the drawings.

[0199] In the first embodiment described above, a case has been described in which the electrostatic chuck device includes the electrostatic chuck unit 2 having concavo-convex portions on the side of the insulating adhesive layer, and the electrostatic capacity of the electrostatic chuck unit is adjusted. In this embodiment, a description will be given of a case where the electrostatic chuck device has a sample mounting surface adjustment electrode between the wafer electrostatic adsorption electrode and the cooling base, and adjusts the accelerating voltage of the high-frequency generating power supply.

[0200] The electrostatic chuck device according to this embodiment is shown as an electrostatic chuck device 301 .

[0201] Figure 8 It is a sectional view showing an example of the electrostatic chuck device 301 according to this embodiment. The e...

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Abstract

A electrostatic chuck device is provided with: an electrostatic chuck part that has a sample placement surface on which a sample is placed, and that has a first electrode for electrostatic attraction;a cooling base part that cools the electrostatic chuck part, and that is positioned on the opposite side of the electrostatic chuck part from the sample placement surface; and an adhesive layer thatbonds the electrostatic chuck part and the cooling base part. The electrostatic chuck part has recesses and protrusions on the adhesive layer side, and the surface resistance value of the first electrode is greater than 1.0 [Omega] / O and lower than 1.0x1010 [Omega] / O.

Description

technical field [0001] The invention relates to an electrostatic chuck device. [0002] This application claims priority based on Japanese Patent Application No. 2017-189718 and Japanese Patent Application No. 2017-189719 filed in Japan on September 29, 2017, and uses the contents thereof here. Background technique [0003] In the manufacture of semiconductor devices, there is known a plasma etching apparatus that generates plasma in a sealable processing chamber to process a substrate to be processed such as a semiconductor wafer. In the plasma etching apparatus, the uniformity of the etching rate and the uniformity of the etching direction in the wafer surface are required. However, in a plasma etching device, the etching rate and etching direction are affected by the electric field strength and the direction of electric force lines in the plasma. For this reason, the in-plane etching rate and the uniformity of the etching direction of the wafer in the plasma etching app...

Claims

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Application Information

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IPC IPC(8): H01L21/683H01L21/3065
CPCH01L21/6831H01L21/6833H01J37/32715H01J37/32724H01J2237/334H01L21/67109H02N13/00B23Q3/15H01L21/67069H01J37/32091H01L21/3065H01L21/67098H01L21/76826
Inventor 小坂井守尾崎雅树前田佳祐
Owner SUMITOMO OSAKA CEMENT CO LTD
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