Physical vapor deposition hole filling equipment

Abstract

The invention provides a physical vapor deposition hole filling equipment, including a cavity, a base, a metal cover, an inner baffle, an insulating cylinder, a magnetron sputtering device, a radio frequency electromagnetic ring, an auxiliary radio frequency electromagnetic ring and an auxiliary magnetic field device; the base Located in the cavity; the radio frequency electromagnetic ring is located in the base; the magnetron sputtering device includes a target carrying plate and a magnetron, the target carrying plate is located on the top of the cavity, and the magnetron is located above the target carrying plate; the metal cover, the inner Both the baffle and the insulating cylinder are located in the cavity, and between the magnetron sputtering device and the base, the metal cover, the inner baffle and the insulating cylinder are distributed in sequence along the direction away from the center of the cavity, and the metal cover and the inner baffle include A plurality of grid-shaped openings extending longitudinally and distributed at intervals, and the openings are staggered from each other; the auxiliary radio frequency electromagnetic ring and the auxiliary magnetic field device are both located between the cavity and the insulating cylinder. The invention can significantly improve the step coverage and film uniformity of deep hole filling, and contribute to improving production yield and reducing production cost.

Description

technical field [0001] The invention relates to a semiconductor manufacturing equipment, in particular to a physical vapor deposition hole filling equipment. Background technique [0002] Physical vapor deposition is one of the most commonly used methods for depositing metal thin films in integrated circuit manufacturing, and is widely used to fill structures such as deep holes or deep grooves with high aspect ratios on the wafer surface. The application of physical vapor deposition in deep hole filling is mainly used to deposit adhesion layer (such as titanium layer), barrier layer (such as titanium nitride layer) and metal seed layer (such as copper seed layer) inside the deep hole. The function of the barrier layer is to prevent the diffusion of the metal seed layer. The metal seed layer is used as a conductive layer for the subsequent metal plating (such as copper plating) process. Therefore, the barrier layer and the metal seed layer deposited in the deep hole structure...

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Problems solved by technology

[0005] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a physical vapor deposition hole filling device, which is used to solve the problem that the physical vapor deposition device in the prior art has poor step coverage when filling deep holes, resulting in The coating on the side wall and bottom is thin or even discontinuous, and the use of a built-in radio frequency electromagnetic coil in direct contact with the deposition chamber to increase the ionization rate of target particles will increase production costs and reduce the efficiency of radio frequency power, resulting in Problems such as poor uniformity of deposited film

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