Method for constructing threshold voltage distribution model of three-dimensional stacked flash memory unit
A threshold voltage distribution and three-dimensional stacking technology is applied in the field of building a threshold voltage distribution model of three-dimensional stacked flash memory cells, which can solve problems such as the inability to intuitively reflect the dynamic evolution law of the threshold voltage distribution, and achieve the effect of improving the reliability of data storage.
Inactive Publication Date: 2020-06-12
上海威固信息技术股份有限公司
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[0003] However, with the widespread application of three-dimensional stacked flash memory, there is a lack of construction of a threshold voltage distribution model for its memory cells, which cannot intuitively reflect the dynamic evolution of the threshold voltage distribution.
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[0032] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention. In addition, the technical features involved in the various embodiments of the present invention described below can be combined with each other as long as they do not constitute a conflict with each other.
[0033] Design structural drawing of the present invention is as figure 1 As shown, the solid lines in the figure indicate different read reference voltages, and the black dots indicate the number of memory cells falling between two adjacent read reference voltages. In the process of constructing the threshold voltage distribution model of three-dimensional stacked flash memory cells, firstly, d...
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The invention discloses a three-dimensional stacked flash memory unit threshold voltage distribution model construction method, which comprises the following steps of: firstly, setting different testconditions, writing randomly generated data into a flash memory block, and acquiring unit quantity discrete points falling into two adjacent read reference voltages by using different read reference voltages; then, a threshold voltage distribution curve is drawn through a difference fitting method, and threshold voltage distribution parameters and models of all the storage layer units are obtained; according to the method, an accurate three-dimensional stacked flash memory threshold voltage distribution dynamic evolution model can be constructed; the method comprises the steps of obtaining a threshold voltage distribution model of a storage unit in each storage layer of the three-dimensional stacked flash memory; and a powerful support and a reference basis can be provided for designing related schemes to improve data storage reliability.
Description
technical field [0001] The invention belongs to the technical field of solid-state disk storage, and more particularly relates to a method for constructing a threshold voltage distribution model of a three-dimensional stacked flash memory unit. Background technique [0002] Flash memory is a large-capacity non-volatile storage device, widely used in medical, aerospace and other fields. Flash memory stores data in the form of stored charges. When electrons are injected into flash memory cells, a corresponding threshold voltage will be formed. The threshold voltage shifts to the left or right as the number of hold cycles and programmable erase cycles increases. The threshold voltage distribution is affected by the save cycle and the programmable erase cycle, and the reliability of data storage is threatened. Especially for three-dimensional stacked flash memory, the reliability of data storage becomes an important factor affecting whether it can be stacked to a higher layer....
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Login to View More IPC IPC(8): G11C16/12G11C16/14G11C16/22G11C5/14
CPCG11C5/147G11C16/12G11C16/14G11C16/225
Inventor 吴佳李礼陈佳苗诗君余云杨冀季峰刘碧贞
Owner 上海威固信息技术股份有限公司