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A non-volatile memory reference calibration circuit and method

A technology for calibrating circuits and memories, which is applied in static memory, read-only memory, information storage, etc., and can solve problems such as reading errors and affecting the reliability of memory data

Active Publication Date: 2016-04-13
致真存储(北京)科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The reference mismatch directly leads to the reduction of the read decision margin of the data unit. When the read decision margin cannot overcome the input mismatch of the read circuit itself, read errors may occur, which seriously affects the data reliability of the memory.

Method used

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  • A non-volatile memory reference calibration circuit and method
  • A non-volatile memory reference calibration circuit and method
  • A non-volatile memory reference calibration circuit and method

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Embodiment Construction

[0079] The substantive features of the present invention are further described with reference to the accompanying drawings. Detailed exemplary embodiments are disclosed herein, specific structural and functional details thereof are merely representative for purposes of describing exemplary embodiments, therefore, the invention may be embodied in many alternative forms and should not be construed To be limited only to the exemplary embodiments set forth herein, all changes, equivalents, and alternatives falling within the scope of the invention should be covered. Additionally, well-known elements, devices and subcircuits of the invention will not be described in detail or will be omitted so as not to obscure the relevant details of the embodiments of the invention.

[0080] figure 1 It is a schematic diagram of the structure of the non-volatile memory 1R1T storage unit; the non-volatile memory 1R1T storage unit consists of a data storage part (with R L with R H The two resis...

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Abstract

The invention provides a reference calibration circuit of a non-volatile memorizer. The reference calibration circuit is composed of a reference unit, a bit line selection transistor, a clamping transistor, a load transistor, a reference calibration resistor and a reference calibration switch. A calibration method of the reference calibration circuit of the non-volatile memorizer comprises seven major steps. The problem that reference mismatch of the non-volatile memorizer is caused by deviation of technological parameters is solved so that the reading judgment allowance of the non-volatile memorizer is improved so as to improve the memorizing reliability of data. The reference calibration circuit of the non-volatile memorizer and the calibration method of the reference calibration circuit have good practical values and wide application prospect in the technical field of the non-volatile memorizers.

Description

technical field [0001] The invention relates to a non-volatile memory reference calibration circuit and method, which are used to improve the reading reliability of the non-volatile memory, and belong to the technical field of the non-volatile memory. Background technique [0002] As the size of the manufacturing process continues to shrink, the power consumption of traditional volatile memories based on field effect transistors (MOS) or complementary metal oxide semiconductors (CMOS), such as static random access memory (SRAM) and dynamic random access memory (DRAM) ( Including static power consumption and dynamic power consumption) are getting bigger and bigger, which limits its further miniaturization and large-scale integration. In recent years, new non-volatile memory technologies, such as Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM), Resistive Random Access Memory (RRAM), and Phase Change Random Access Memory (PhaseChange Random Access Memory, PCRAM), ...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/06G11C29/50
Inventor 康旺郭玮赵巍胜张有光
Owner 致真存储(北京)科技有限公司
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