Reference calibration circuit of non-volatile memorizer and calibration method of reference calibration circuit

Abstract

The invention provides a reference calibration circuit of a non-volatile memorizer. The reference calibration circuit is composed of a reference unit, a bit line selection transistor, a clamping transistor, a load transistor, a reference calibration resistor and a reference calibration switch. A calibration method of the reference calibration circuit of the non-volatile memorizer comprises seven major steps. The problem that reference mismatch of the non-volatile memorizer is caused by deviation of technological parameters is solved so that the reading judgment allowance of the non-volatile memorizer is improved so as to improve the memorizing reliability of data. The reference calibration circuit of the non-volatile memorizer and the calibration method of the reference calibration circuit have good practical values and wide application prospect in the technical field of the non-volatile memorizers.

Description

technical field [0001] The invention relates to a non-volatile memory reference calibration circuit and method, which are used to improve the reading reliability of the non-volatile memory, and belong to the technical field of the non-volatile memory. Background technique [0002] As the size of the manufacturing process continues to shrink, the power consumption of traditional volatile memories based on field effect transistors (MOS) or complementary metal oxide semiconductors (CMOS), such as static random access memory (SRAM) and dynamic random access memory (DRAM) ( Including static power consumption and dynamic power consumption) are getting bigger and bigger, which limits its further miniaturization and large-scale integration. In recent years, new non-volatile memory technologies, such as spin transfer torque magnetic random access memory (STT-MRAM), resistive random access memory (Resistive Random Access Memory, RRAM), and phase change random access memory ( Phase Ch...

AI Technical Summary

Problems solved by technology

The reference mismatch directly leads to the reduction of the read decision margin of the data unit. When the read decision margin cannot overcome the input mismatch of the read circuit itself, read errors may occur, which seriously affects the data reliability of the memory.

Images