Surface grating semiconductor laser and manufacturing method thereof

Abstract

A surface grating semiconductor laser and a manufacturing method thereof, comprising the following steps: sequentially growing a buffer layer, a quantum well layer, a cladding layer, and a contact layer on a substrate; depositing a SiN layer on the contact layer, and making a SiN grating mask; Deposition of SiO on SiN grating mask and exposed contact layer 2 layer; in SiO 2 Coating photoresist on the layer, and making a photoresist ridge strip mask; using dry etching technology to remove SiO outside the photoresist ridge strip mask 2 layer and SiN grating mask; using selective etching of SiO 2 layer, making SiO 2 The layer undergoes lateral corrosion to form SiO 2 Ridge waveguide mask; photoresist removed, on SiO 2 Under the protection of the ridge waveguide mask and the SiN grating mask, the contact layer and the cladding layer are etched by dry etching technology to complete the fabrication of the ridge waveguide and the surface grating. The surface gratings of the device located on both sides of the ridge waveguide of the present invention can be realized by ordinary photolithography technology, which is beneficial to reduce the manufacturing cost of the device.

Description

technical field [0001] The invention relates to the field of optoelectronic devices, in particular to a surface grating semiconductor laser and a manufacturing method thereof. Background technique [0002] Introducing a distributed feedback grating structure is an important means to obtain a single-mode semiconductor laser, which is called a distributed feedback (DFB) laser. Taking the InGaAsP / InP material system as an example, the conventional DFB laser grating is located between the InGaAsP quantum well and the InP cladding material. Two MOCVD epitaxial growths are required to complete the device fabrication, that is, the quantum well material is obtained in the first growth, and the InP cladding material is grown in the second epitaxy after the grating is fabricated. In order to simplify the device fabrication process, DFB lasers with surface grating structures have been developed. The quantum well and cladding material of this device can be grown in a single epitaxy, a...

AI Technical Summary

Problems solved by technology

Therefore, most surface grating lasers are produced by electron beam lithography, but this equipment is expensive and takes a long time to process, which is not conducive to mass production of devices

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