A polarizing multilayer film for 50-70nm vacuum ultraviolet band and its preparation method
A vacuum ultraviolet, multi-layer film technology, applied in polarizing elements, vacuum evaporation coating, coating and other directions, can solve the problem of low flux of polarizing elements
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[0039] The present invention also provides a method for preparing the polarizing multilayer film described in the above technical solution, comprising the following steps:
[0040] On the surface of the substrate, the first SiC layer, the first Si layer, the first MgF 2 layer, second SiC layer, second Si layer, second MgF 2 layer, the third SiC layer, the third Si layer and the third MgF 2 Layer magnetron sputtering.
[0041] The present invention has no special limitation on the material of the substrate.
[0042] In the present invention, the background vacuum of the magnetron sputtering is preferably greater than 9E-5Pa; the working gas of the magnetron sputtering is preferably Ar, the flow rate of the Ar is preferably 20 sccm, and the pressure of the Ar is preferably 0.25Pa .
[0043] In the present invention, sputtering the first MgF 2 layer, the second MgF 2 layer and the third MgF 2 The method of layering is preferably radio frequency magnetron sputtering, the sp...
Embodiment 1
[0050] A polarizing multilayer film used in the vacuum ultraviolet band of 50-70nm, comprising a first SiC layer, a first Si layer, and a first MgF layer sequentially stacked on the surface of a substrate 2 layer, second SiC layer, second Si layer, second MgF 2 layer, the third SiC layer, the third Si layer and the third MgF 2 layer, the light in the vacuum ultraviolet band of 50-70nm is incident at 45°, the thickness of the first SiC layer is 20nm, the thickness of the first Si layer is 1.84nm, and the first MgF 2 The thickness of the layer is 0.5nm, the thickness of the second SiC layer is 17.70nm, the thickness of the second Si layer is 11.34nm, the second MgF 2 The thickness of the layer is 0.5nm, the thickness of the third SiC layer is 2.01nm, the thickness of the third Si layer is 0.5nm, the third MgF 2 The thickness of the layer was 5.26 nm.
[0051] figure 1 R under the 45° incident angle of the polarizing multilayer film provided by Example 1 of the present invent...
Embodiment 2
[0083] A polarizing multilayer film used in the vacuum ultraviolet band of 50-70nm, comprising a first SiC layer, a first Si layer, and a first MgF layer sequentially stacked on the surface of a substrate 2 layer, second SiC layer, second Si layer, second MgF 2 layer, the third SiC layer, the third Si layer and the third MgF 2 layer, the light in the vacuum ultraviolet band of 50-70nm is incident at 60°, the thickness of the first SiC layer is 20nm, the thickness of the first Si layer is 15nm, and the first MgF 2 The thickness of the layer is 0.5nm, the thickness of the second SiC layer is 0.5nm, the thickness of the second Si layer is 20nm, the second MgF 2 The thickness of the layers is 0.5 nm, the thickness of the third SiC layer is 0.5 nm, the thickness of the third Si layer is 20 nm, and the thickness of the third MgF2 layer is 7.69 nm.
[0084] The preparation method is the same as in Example 1.
[0085] Figure 9 R under the 60° incident angle of the polarizing mult...
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