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Mask making method and mask

A manufacturing method and mask technology, applied in the field of mask manufacturing method and mask

Active Publication Date: 2021-12-21
CSMC TECH FAB2 CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Based on this, it is necessary to provide a method for making a mask and a method for making a mask for the problem that the corners cannot be met after arcing.

Method used

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  • Mask making method and mask
  • Mask making method and mask
  • Mask making method and mask

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Embodiment Construction

[0054] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. However, the present invention can be implemented in many other ways different from those described here, and those skilled in the art can make similar improvements without departing from the connotation of the present invention, so the present invention is not limited by the specific implementations disclosed below.

[0055] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field of the invention. The terms used herein in the description of the present invention are for the purpose of descr...

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Abstract

The invention relates to a mask making method and a mask, wherein the mask making method includes: establishing an OPC program; providing a design graphic, and preprocessing the corner graphics in the design graphic; according to the OPC program, including the preprocessed OPC operation is performed on the design graphics of the corner graphics; the mask plate is made according to the graphics after the OPC calculation, so that not only the intermediate CD can meet the actual needs, but also the corner CD can meet the actual needs, effectively avoiding the problem of satisfying the middle CD by sacrificing the corner CD. The corners are too rounded to meet the needs of users.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a mask making method and a mask. Background technique [0002] With the rapid development of VLSI, the manufacturing process of integrated circuits has become more and more complex and sophisticated. In the key levels of 0.13um and below technology nodes, the CD (critical dimension) of key levels such as TO (active area level), GT (gate oxide level) and An (metal connection level) is getting smaller and smaller. The CDs of some key levels are close to or even smaller than the wavelength 248nm of the light wave used in the lithography process. Therefore, during the exposure process in lithography, due to light interference and diffraction, the lithography pattern obtained on the actual product wafer is different from the mask. There are certain deformations and deviations between stencil patterns, and such errors in lithography directly affect circuit performance and produ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F1/36
CPCG03F1/36
Inventor 陈洁王谨恒朱斌张斌张剑
Owner CSMC TECH FAB2 CO LTD