A tdiccd image sensor with uniform imaging

Abstract

The invention discloses a TDICCD image sensor with uniform imaging, comprising a TDICCD array, wherein the TDICCD array includes several pixel structures, each of the pixel structures includes a substrate and a vertical CCD structure arranged on the substrate , the vertical CCD structure is used to transmit optically generated signals, and an anti-halation structure is arranged between two adjacent vertical CCD structures; the vertical CCD structure includes a first vertical CCD driving phase, a second vertical CCD driving phase, a third The vertical CCD driving phase and the fourth vertical CCD driving phase, a blocking potential barrier structure is arranged between the two adjacent fourth vertical CCD driving phases, and the blocking potential barrier structure is arranged around the anti-halation structure; A non-uniform implanted buried trench structure is arranged between the substrate and the vertical structure, which can prevent the occurrence of the halo phenomenon and effectively prevent the generation of the leakage channel, so that the TDICCD can image uniformly.

Description

technical field [0001] The invention relates to the technical field of image sensors, in particular to a TDICCD image sensor with uniform imaging. Background technique [0002] As an important branch of CCD technology, TDICCD technology has obvious advantages in the field of satellite applications. It has been widely used in aerospace because of its functions such as improving light response sensitivity and signal-to-noise ratio, eliminating image shift, and changing exposure time by selecting TDI series. Remote sensing and high-altitude reconnaissance are the core devices for image acquisition and target recognition on spaceborne and airborne. At present, most of the remote sensing satellite reconnaissance cameras and aerial reconnaissance cameras in orbit around the world and under research use TDICCD. [0003] However, when TDICCD is irradiated by strong light in practical applications, a halo phenomenon will appear, that is, there are bright spots in the imaged image, an...

AI Technical Summary

Problems solved by technology

The anti-halation structure is composed of anti-halation barrier and anti-halation leakage, but due to the effect of anti-halation leakage, the height of the anti-halation barrier under the level gate of TDICCD will be pulled higher than the level of the level gate The off barrier phase potential of the off gate (about 0V), so that a leakage channel appears in this area, when the light intensity irradiated on the pixel reaches or exceeds the height of the anti-halation barrier of the pixel When the well capacity of the picture element is full, part of the excess light-generated signal generated is drawn away by the anti-halation leakage, and the other part will enter the next adjacent picture element through the leakage channel, resulting in uneven imaging

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