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Epitaxial structure manufacturing method and epitaxial structure
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A technology of epitaxial structure and manufacturing method, applied in semiconductor/solid-state device manufacturing, coating, gaseous chemical plating, etc., can solve the problems of poor uniformity of epitaxial structure, achieve high use value, high uniformity, and avoid increase in manufacturing cost Effect
Active Publication Date: 2020-08-18
DYNAX SEMICON
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[0004] In view of this, the purpose of this application is to provide a method for manufacturing an epitaxial structure and an epitaxial structure, so as to improve the problem of poor uniformity among the epitaxial structures obtained by epitaxial growth in the same equipment and the same process in the prior art
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Embodiment 1
[0058] Such as image 3 and Figure 4 As shown, the embodiment of the present application provides a method for manufacturing an epitaxial structure, which may include step S110, step S120, and step S130, and the specific content is as follows.
[0059] Step S110, providing a plurality of substrates 110, and classifying the plurality of substrates 110 based on the degree of warpage to obtain at least one substrate group.
[0060] In this embodiment, after obtaining a plurality of substrates 110 , each substrate 110 may be measured first, so as to obtain the warpage of each substrate 110 . Then, classification is performed based on the warpage of each substrate 110 to obtain at least one substrate group.
[0061] Wherein, the warpages of the substrates 110 in the same substrate group belong to the same preset range, and the warpages of the substrates 110 in different substrate groups belong to different preset ranges. It can be understood that, especially when the number of ...
Embodiment 2
[0116] combine Figure 7 and Figure 8 , the embodiment of the present application also provides another epitaxial structure manufacturing method, which may include step S210 and step S220, and the specific content is as follows.
[0117] Step S210 , providing at least two substrates including a first substrate 111 and a second substrate 112 .
[0118] In this embodiment, the first substrate 111 may have a first degree of warpage (such as Figure 8 h1 in ), the second substrate 112 may have a second degree of warpage (such as Figure 8 h2) in , and the first degree of warpage is different from the second degree of warpage.
[0119] Wherein, the at least two substrates may also include other substrates, and the warpage of the substrates may be the same as the first warpage or the second warpage, or may be the same as the first warpage. The first degree of warping or said second degree of warping are different.
[0120] Step S220, when the first degree of warpage and the se...
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Abstract
The invention provides an epitaxial structure manufacturing method and an epitaxial structure, and relates to the technical field of semiconductors. The epitaxial structure manufacturing method comprises the steps of providing multiple substrates, classifying the multiple substrates based on warping degrees to obtain at least one substrate group, wherein the warping degrees of all the substrates in the same substrate group belong to the same preset range, and the warping degrees of all the substrates in different substrate groups belong to different preset ranges; obtaining at least two substrates in one substrate group; and forming a matching layer on one surface of each of the at least two substrates in an epitaxial growth manner through the same equipment and the same process so as to adjust the warping degree of the substrate through the stress formed between the matching layer and the substrate. By means of the method, the problem that in the prior art, the epitaxial structures obtained through epitaxial growth conducted through the same equipment and the same process are worse in uniformity can be solved.
Description
technical field [0001] The present application relates to the field of semiconductor technology, and in particular, relates to a method for manufacturing an epitaxial structure and an epitaxial structure. Background technique [0002] In semiconductor devices, especially GaN optoelectronic devices and power devices, Si, SiC and Sapphire (sapphire) are mainly used as substrates. Among them, in the actual production process, batch epitaxial growth is generally performed on multiple substrates in the same equipment (such as MOCVD equipment) and the same process (such as MOCVD process). [0003] The inventors have found through research that there are generally some substrates with a certain degree of warpage among multiple substrates, and the difference between the degrees of warpage of different substrates may be relatively large, especially when the substrates are recycled and used. The difference in curvature will be even greater. Therefore, in the case where the warpage o...
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