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Wafer transmission control method

A transmission control and wafer technology, applied in the direction of conveyor objects, transportation and packaging, semiconductor/solid-state device manufacturing, etc., can solve the problems of AWC data dispersion, improve wafer center offset, solve AWC data dispersion problems, The effect of weakening or eliminating the air cushion effect

Pending Publication Date: 2020-08-28
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to propose a wafer transmission control method to eliminate the wafer sliding and wafer center offset caused by the air cushion effect after the nitrogen gas control pressure, and then solve the AWC data discrete problem under the nitrogen gas control pressure

Method used

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Embodiment Construction

[0046] An existing wafer transfer method is as follows: when the wafer is transferred from the transition chamber of TM to the process chamber of PM, the pressure in the transition chamber is controlled at 90mT, and the pressure in the process chamber is controlled by nitrogen pressure control method. Controlled at 80mT, at this time, the problem of particle (PA) contamination can be greatly improved. But this method has the following problems:

[0047] In the case of controlled nitrogen pressure (the pressure in the transition chamber is 90mT, and the pressure in the process chamber is 80mT), the transported wafers have significantly improved the problem of particle contamination, but it has brought about the discrete problem of AWC data, which represents the center of the wafer. Offset from the transfer center. The AWC data for this method is as figure 1 As shown, it can be clearly seen that the AWC data dispersion problem caused by the method after the nitrogen pressure c...

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Abstract

The invention discloses a wafer transmission control method, which comprises the steps: inputting target gas into a process cavity, and carrying out vacuum exhaust, so that the process cavity is maintained at a first pressure; sequentially opening the gate valves of the process chamber and a transition chamber, and conveying a wafer from the transition chamber at a second pressure to a supportingneedle assembly rising in the process chamber at the first pressure, wherein the second pressure is larger than the first pressure, and the difference value of the second pressure and the first pressure is within a preset range; closing the gate valves of the transition chamber and the process chamber in sequence, and stopping inputting the target gas into the process chamber; keeping vacuum exhaust for a preset duration to reduce the concentration of the target gas in the process chamber; and controlling the supporting needle assembly to drive the wafer to descend so as to place the wafer onan electrostatic chuck located below the supporting needle assembly. According to the method, wafer sliding caused by air cushion effect can be weakened or eliminated, so that the problem of AWC datadiscretization after nitrogen pressure control is solved.

Description

technical field [0001] The present invention relates to the field of semiconductor equipment, and more particularly, to a wafer transport control method. Background technique [0002] Semiconductor equipment performs a certain processing process on the wafer through physical and chemical means, and this process needs to be realized in a certain vacuum environment. The modules that implement this process are called Process Modules (PM). The process of the wafer (wafer) entering the PM from the FAB (factory) environment, and then entering the vacuum environment from the atmospheric environment is realized by the transmission system (TM). The transmission system includes an equipment front end module (EFEM for short), a vacuum hand, a transition chamber and a vacuum chamber. The EFEM and transition chamber, transition chamber and vacuum chamber are all isolated by gate valves. The transition chamber has a small volume and can quickly switch between a vacuum environment and a...

Claims

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Application Information

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IPC IPC(8): H01L21/67H01L21/677
CPCH01L21/67017H01L21/67253H01L21/67196H01L21/67739
Inventor 王松涛
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD