Manufacturing method of 3D NAND memory device and 3D NAND memory device
What is AI technical title?
AI technical title is built by PatSnap AI team. It summarizes the technical point description of the patent document.
A technology of 3D NAND and storage devices, which is applied in semiconductor devices, electric solid devices, electrical components, etc., can solve the problems of large driving time delay and large resistance, reduce driving time delay, reduce driving resistance, and improve structural stability Effect
Active Publication Date: 2020-09-22
YANGTZE MEMORY TECH CO LTD
View PDF14 Cites 0 Cited by
Summary
Abstract
Description
Claims
Application Information
AI Technical Summary
This helps you quickly interpret patents by identifying the three key elements:
Problems solved by technology
Method used
Benefits of technology
Problems solved by technology
[0003] However, in the current 3D NAND memory device, the step structure is arranged at both ends of the stack structure, and the step structure is in a single-side driving mode. As the number of stack layers increases, each stack layer is designed to be thinner and thinner, and the corresponding The resistance is getting larger and larger, resulting in a larger and more obvious driving time delay
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more
Image
Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
Click on the blue label to locate the original text in one second.
Reading with bidirectional positioning of images and text.
Smart Image
Examples
Experimental program
Comparison scheme
Effect test
Embodiment 1
[0070] like figure 2 shown, combined with Figure 3-11 , an embodiment of the present invention provides a method for manufacturing a stepped structure, comprising the steps of:
[0071] S1, providing a substrate 1, and forming a stack structure 2 on the substrate 1;
[0072] S2. Form partition steps 231 and 232 on the stack structure 2, and divide the stack structure 2 into a first core area A1, a stepped area B, and a second core area A2 arranged in sequence along the extending direction of the storage block;
[0073] S3. Form a barrier layer in the stepped area B, and selectively etch the barrier layer, and form a plurality of first bridge structures 2031 and second bridge structures 2032 in the stepped area B, and the first bridge structures 2031 connect the first core area A1 and the first core area A1. In the second core area A2, two adjacent first bridge structures 2031 are connected by a second bridge structure 2032, and the step area B is divided into a plurality o...
Embodiment 2
[0124] In the first embodiment, there is only one second bridge structure 2032 for buffer support between two adjacent first bridge structures 2031, and the structural stability of the first bridge structure 2031 and the step structure 203 needs to be strengthened. Based on this , some improvements are made in this embodiment.
[0125] like Figure 13 and Figure 14 As shown, this embodiment proposes a method for manufacturing a stepped structure. When forming a barrier layer in the stepped region B and selectively etching the barrier layer, two adjacent first bridge structures 2031 are connected by at least one second bridge structure 2032, That is, two adjacent first bridge structures 2031 may be connected by one second bridge structure 2032 , or by two second bridge structures 2032 , or by three or more second bridge structures 2032 .
[0126] In detail, such as Figure 13 As shown, in the step area B, some adjacent two first bridge structures 2031 are connected through ...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More
PUM
Login to View More
Abstract
The invention provides a manufacturing method of a 3D NAND memory device and the 3D NAND memory device. A step structure is arranged in the middle of a stacking structure and comprises a plurality ofpartition step structures, a first bridge structure and a second bridge structure. Through the first bridge structure connected with the first core region and the second core region and the partitionstep structure, bilateral driving of the step structure is achieved, driving can be conducted from the middle of the stacking structure to the storage array structures in the first core region and thesecond core region, the corresponding driving resistance is reduced, and the problem of driving time delay is effectively reduced. Every two adjacent first bridge structures are connected through atleast one second bridge structure, in other words, the second bridge structures are arranged between every two adjacent first bridge structures for supporting and buffering, the stress difference between stacked composite layers in the first bridge structures and subsequently-filled oxide can be effectively relieved, and the structural stability of the first bridge structures and the structural stability of the step structures are improved.
Description
technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for manufacturing a 3D NAND storage device and the 3D NAND storage device. Background technique [0002] 3D NAND storage devices need to stack data units. The current double-layer stacking technology can achieve 72-layer, 96-layer or even 128-layer data unit stacking, which overcomes the limitation of the actual expansion limit of planar memory and further improves storage capacity, lower storage costs per data bit, and lower energy consumption. [0003] However, in the current 3D NAND memory devices, the step structure is arranged at both ends of the stack structure, and the step structure is in a single-side driving mode. As the number of stack layers increases, each stack layer is designed to be thinner and thinner, and the corresponding Larger and larger resistors lead to larger and more pronounced drive time delays. Contents of the invention ...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More
Application Information
Patent Timeline
Application Date:The date an application was filed.
Publication Date:The date a patent or application was officially published.
First Publication Date:The earliest publication date of a patent with the same application number.
Issue Date:Publication date of the patent grant document.
PCT Entry Date:The Entry date of PCT National Phase.
Estimated Expiry Date:The statutory expiry date of a patent right according to the Patent Law, and it is the longest term of protection that the patent right can achieve without the termination of the patent right due to other reasons(Term extension factor has been taken into account ).
Invalid Date:Actual expiry date is based on effective date or publication date of legal transaction data of invalid patent.
Login to View More 
Login to View More