A device and method for transferring graphene in batches to a grid-carrying copper substrate

A technology of copper substrate and graphene, applied in the field of graphene, can solve the problem of lack of batch transfer of graphene, etc., and achieve the effect of simple operation and simple process principle

Active Publication Date: 2022-01-04
GUANGDONG MORION NANOTECHNOLOGY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Graphene transfer technology is a physical transfer technology that transfers graphene from a growth substrate to a target load substrate; the maturity of batch or massive graphene transfer technology determines the subsequent scale-up of graphene in various fields Whether the application can be successful, the batch graphene transfer technology is very important; at present, the graphene transfer technology field still lacks a mature method for transferring graphene in batches

Method used

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  • A device and method for transferring graphene in batches to a grid-carrying copper substrate
  • A device and method for transferring graphene in batches to a grid-carrying copper substrate
  • A device and method for transferring graphene in batches to a grid-carrying copper substrate

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Embodiment 1

[0034] like figure 1 , figure 2 , image 3 , Figure 4 As shown, a device for batch transferring graphene to a mesh-carrying copper substrate includes a load plate 1 and a load plate base 2 made of polytetrafluoroethylene; the load plate 1 has a matrix arrangement (linear matrix or circular matrix) Or irregularly arranged load holes 3 for the meshed copper substrate, the lower part of the load hole 3 is provided with a lead-out hole 4 that is coaxial with the load hole, has a diameter smaller than the load hole 3, and penetrates the load plate 1; the load plate The base 2 is provided with a supporting column 5 which is equal to the lead-out hole 4, coaxial and matched with each other.

[0035] When the load plate 1 is attached to the load plate base 2, the support column 5 passes through the lead-out hole 4 and the load hole 3, and the top surface of the support column 5 is 0.2mm higher than the load surface 6 of the load plate 1, which is used to push out the load hole 3 ...

Embodiment 2

[0045] like figure 1 , figure 2 , image 3 , Figure 4As shown, a device for batch transferring graphene to a mesh-carrying copper substrate includes a load plate 1 and a load plate base 2 made of quartz glass; the load plate 1 has a matrix arrangement (linear matrix or circular matrix) or no Regularly arranged load holes 3 for the meshed copper substrate, the lower part of the load holes 3 is provided with a lead-out hole 4 that is coaxial with the load holes 3, has a diameter smaller than the load holes 3, and penetrates the load plate 1; the load plate base 2 is provided with a support column 5 which is equal to the lead-out hole 4, coaxial and matched with each other.

[0046] Preferably, when the load plate 1 is attached to the load plate base 2, the support column 5 passes through the lead-out hole 4 and the load hole 3, and the top surface of the support column 5 is 0.5 mm higher than the load surface of the load plate 1. To push out the carrier copper substrate in...

Embodiment 3

[0056] like figure 1 , figure 2 , image 3 , Figure 4 As shown, a device for batch transferring graphene to a mesh-carrying copper substrate includes a load plate 1 and a load plate base 2 made of polytetrafluoroethylene; the load plate 1 has a matrix arrangement (linear matrix or circular matrix) Or irregularly arranged load holes 3 for the meshed copper substrate, the lower part of the load hole 3 is provided with a lead-out hole 4 that is coaxial with the load hole 3, has a diameter smaller than the load hole 3, and penetrates the load plate 1; the load The disk base 2 is provided with a supporting column 5 which is equal to the lead-out hole 4, coaxial and matched with each other.

[0057] When the load plate 1 is attached to the load plate base 2, the support column 5 passes through the lead-out hole 4 and the load hole 3, and the top surface of the support column 5 is 0.3mm higher than the load surface of the load plate 1 for pushing out the load hole 3. Mesh carri...

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Abstract

The invention relates to the technical field of graphene, a device for transferring graphene in batches to a grid-carrying copper substrate, comprising a load plate and a load plate base made of polytetrafluoroethylene; the load plate has a matrix arrangement (linear matrix or circular Matrix) or randomly arranged copper substrate load holes, the lower part of the load hole is provided with a lead-out hole that is coaxial with the load hole, has a diameter smaller than the load hole, and passes through the load plate; the base of the load plate is provided with Support columns that are equal, coaxial and matched to the outlet holes. A method for transferring graphene in batches to a grid-carrying copper substrate, comprising the steps of spin-coating PMMA solution, solidification, pre-etching, etching, rinsing, and film removal on the copper foil surface growing graphene; applying the present invention The device and method can transfer graphene to the grid-carrying copper substrate in batches, and the operation is simple, and the transfer process and device can be modified and designed according to actual needs.

Description

technical field [0001] The present invention relates to the technical field of graphene, and in particular, to a device and method for batch transferring graphene to a mesh-carrying copper substrate. Background technique [0002] from carbon atoms to SP 2 Graphene, a two-dimensional material hybridized to form a regular hexagon, is a zero-bandgap semiconductor material with high electrical conductivity (theoretical electron mobility rate ~200,000 cm). 2 / v.s), high thermal conductivity (theoretical thermal conductivity ~5000W / m.K), low absorbance (~2.3%), high specific surface area (~2630m 2 / g) and other excellent properties, it has huge application prospects and commercial value in integrated circuits, functional materials, display devices, sensors and other fields. [0003] At present, graphene preparation methods include: physical exfoliation method, epitaxial growth method, graphene oxide reduction method, metal catalyzed epitaxial growth method, chemical vapor deposi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/194
CPCC01B32/194
Inventor 蔡金明陈其赞郝振亮梁洁园萧文秋
Owner GUANGDONG MORION NANOTECHNOLOGY CO LTD
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