Optical proximity correction method for contact hole photoetching process hot spot
A technology for optical proximity correction and photolithography, which is used in optics, photolithography for patterned surfaces, originals for optomechanical processing, etc.
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[0036] The specific implementation manner of the present invention will be described in more detail below with reference to schematic diagrams. The advantages and features of the present invention will be more apparent from the following description. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.
[0037] figure 1 It is a schematic diagram of the OPC graph in this embodiment. Such as figure 1 As shown, the contact hole area in the OPC pattern will have a pattern-dense area and a pattern-sparse area. The light scattering effect of the sparse pattern area is weaker than that of the pattern dense area, resulting in a smaller photolithography process window in the pattern sparse area than in the pattern dense area, which further leads to a smaller overall process window of the OPC pattern. .
[0038] The lit...
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