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A kind of photoresist composition and its application

A technology of composition and photoresist, which is applied in the direction of optics, optomechanical equipment, and photosensitive materials used in optomechanical equipment, etc., can solve the problems of limited improvement in resolution and sensitivity, and achieve the effect of improving absorption rate

Active Publication Date: 2021-08-10
JIANGSU AISEN SEMICON MATERIAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The thick film photoresist composition containing high heat resistance carboxyl phenolic resin has good heat resistance and good etching resistance, and is suitable for MEMS processing and packaging technology requiring high heat resistance, but the resolution and sensitivity are improved limited

Method used

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  • A kind of photoresist composition and its application
  • A kind of photoresist composition and its application
  • A kind of photoresist composition and its application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0048] This embodiment provides a photoresist composition, which includes the following components: 100g phenolic resin (x / y=28 / 72, R and R' are both hydroxyl groups, M w =2500, molecular weight distribution is 1.37), 400g propylene glycol methyl ether acetate and ethyl lactate (the two mass ratios are 70:30), 20g photosensitizer-1, 0.16g perfluoroalkyl polyether surfactant, 0.04g The composition of modified silicon polydimethylsiloxane and 0.08 g of silicone, the silicone in each embodiment of the present invention refers to: vinyltrimethoxysilane.

[0049] The preparation method of above-mentioned photoresist composition is as follows:

[0050] The above components were mixed, dissolved and then filtered through a 0.02 μm filter element to obtain a photoresist composition.

[0051] Wherein, photosensitizer-1 structure is as follows:

[0052]

Embodiment 2

[0054] This embodiment provides a photoresist composition, which includes the following components: 100g of phenolic resin (x / y=26 / 74, R and R' are both hydroxyl groups, M w =2200, molecular weight distribution is 1.51), 400g propylene glycol methyl ether acetate and ethyl lactate (both mass ratio is 75:25), 19g photosensitizer-1 (shown with embodiment 1), 0.13g perfluoroalkyl Polyether surfactant, a composition of 0.02g modified silicon dimethicone and 0.10g silicone.

[0055] The preparation method of above-mentioned photoresist composition is as follows:

[0056] The above components were mixed, dissolved and then filtered through a 0.02 μm filter element to obtain a photoresist composition.

Embodiment 3

[0058] This embodiment provides a photoresist composition, which includes the following components: 100g of phenolic resin (x / y=20 / 80, R and R' are both methyl, M w =2200, molecular weight distribution is 1.14), 400g propylene glycol methyl ether acetate and ethyl lactate (the two mass ratios are 75:25), 19.5g photosensitizer-2, 0.13g perfluoroalkyl polyether surfactant, 0.01 A composition of g modified silicon dimethicone and 0.11 g silicone.

[0059] The preparation method of above-mentioned photoresist composition is as follows:

[0060] The above components were mixed, dissolved and then filtered through a 0.02 μm filter element to obtain a photoresist composition.

[0061] Wherein, photosensitizer-2 structure is as follows:

[0062]

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Abstract

The invention relates to a photoresist composition and application thereof. The photoresist composition includes the following components: a phenolic resin, a photosensitizer and a solvent; the phenolic resin has a structure shown in formula I. The phenolic resin includes two structural units of 2,5-xylenol and 3,5-xylenol, and the phenolic resin of this specific structure is applied in the photoresist composition, which can make the photoresist have coating It has the characteristics of good performance, high resolution, fast photosensitive speed, high temperature resistance and excellent etching resistance.

Description

technical field [0001] The invention relates to the technical field of semiconductor processing, in particular to a photoresist composition and its application. Background technique [0002] With the rapid development of the semiconductor industry, products have higher and higher requirements for the resolution of photoresists, and the production of chips and wafers has also shifted from 6 inches to 8-12 inches. There are three main ways to improve the resolution of photoresist by applying the current process technology: the first is to shorten the exposure wavelength from 435nm to 365nm; the second is to increase the NA value of the dry etching machine to improve the resolution of photoresist ; The most widely studied third option is to select new resins and photosensitizers to achieve high resolution of photoresists from the perspective of raw material formulations. [0003] Known phenolic resins with phenolic hydroxyl groups and photosensitizer compositions can be used a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/039H01L21/027
CPCG03F7/004H01L21/0271
Inventor 卞玉桂杨彦姚国强向文胜赵建龙张兵谢立洋朱坤陆兰顾群艳
Owner JIANGSU AISEN SEMICON MATERIAL CO LTD
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