Thin film bulk acoustic resonator and manufacturing method thereof
A thin-film bulk acoustic wave and manufacturing method technology, applied in impedance networks, electrical components, etc., can solve problems such as film rupture, reduce the Q value of thin-film bulk acoustic resonators, and affect the performance of thin-film bulk resonators, so as to avoid the impact of performance. Effect
Active Publication Date: 2022-05-10
NINGBO SEMICON INT CORP
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Problems solved by technology
[0007] But above-mentioned method still has multiple shortcoming, for example: when this method carries out chemical-mechanical polishing (CMP) process to substrate 100 and sacrificial material, because grinding rate difference may form tiny depression in sacrificial layer 101 area, this will cause follow-up The growth uniformity of the piezoelectric layer 103 is affected, which ultimately affects the performance of the thin film bulk resonator
In addition, this method needs to make a sacrificial layer 101, and the release process of the sacrificial layer 101 is very easy to cause the related film of the thin film bulk acoustic resonator to break
Moreover, if the sacrificial layer 101 is not released cleanly and there are impurities remaining, this will greatly reduce the Q value of the thin film bulk acoustic resonator and affect the quality of the thin film bulk acoustic resonator
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[0043]The thin film bulk acoustic resonator and the manufacturing method of the thin film bulk acoustic resonator of the present invention will be further described in detail below with reference to the drawings and specific embodiments. According to the following description and accompanying drawings, the advantages and characteristics of the present invention will be clearer, however, it should be noted that the concept of the technical solution of the present invention can be implemented in many different forms, and is not limited to the specific implementation set forth herein. example. The drawings are all in very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.
[0044] The terms "first", "second", etc. in the description and claims are used to distinguish between similar elements and not necessarily to describe a specific order or chronological order. It is...
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Abstract
The invention provides a thin film bulk acoustic resonator and a manufacturing method thereof. A first electrode layer, a piezoelectric material layer and a second electrode layer are sequentially formed on a first substrate, and then a supporting layer is formed on the second electrode layer. A cavity with an open top is formed in the support layer, and then the support layer is bonded to the second substrate, and then the first substrate is removed, and the first electrode layer, the piezoelectric material layer and the second electrode layer are patterned to form the second electrode layer. An electrode, a piezoelectric layer and a second electrode. The present invention realizes the cavity structure of the thin-film bulk acoustic wave filter by etching the support layer and the bonding process, avoids the influence of the tiny fluctuations between different media brought about by the CMP process on the uniformity of the piezoelectric layer, and avoids the influence caused by the The effect of incomplete dilution of sacrificial layer on the performance of thin film bulk acoustic wave filter.
Description
technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a thin-film bulk acoustic wave resonator and a manufacturing method thereof. Background technique [0002] Radio frequency (RF) communications, such as those used in mobile phones, require the use of RF filters, each of which passes the desired frequency and restricts all other frequencies. With the development of mobile communication technology, the amount of mobile data transmission is also increasing rapidly. Therefore, under the premise of limited frequency resources and the use of as few mobile communication devices as possible, improving the transmission power of wireless power transmission equipment such as wireless base stations, micro base stations or repeaters has become a problem that must be considered, and it also means that the The requirements for filter power in the front-end circuit of mobile communication equipment are also getting higher and higher. ...
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IPC IPC(8): H03H3/02H03H9/17
CPCH03H3/02H03H9/171H03H2003/023H03H2003/021H03H9/173H03H9/0514
Inventor 杨国煌
Owner NINGBO SEMICON INT CORP