Magnetic memory reading circuit capable of resisting single-event double-node upset based on C unit

Abstract

The invention relates to a magnetic memory reading circuit capable of resisting a single-event double-node upset based on a C unit. The magnetic memory reading circuit is characterized in that the input end of a pre-charging circuit is connected with a pre-charging signal PRE; the output end of the pre-charging circuit is connected with an internal node Q1, an internal node Q2, an internal node Q3, an internal node Q4, an internal node Q5 and an internal node Q6 of a latch circuit; the output end of the latch circuit is connected with the input end of a read circuit separation module. the output end of the read circuit separation module is connected with a bit line BL1 and a bit line BL2 of a magnetic random access memory storage unit having data information to be read; the input end of anoutput circuit is connected with the internal node Q1, the internal node Q3 and the internal node Q5 of a latch circuit module; and the output end OUT of an output circuit module is the output end ofthe magnetic memory reading circuit . According to the magnetic memory reading circuit, not only can a data information reading function be realized at high speed and low power consumption, but alsothe single-event double-node upset resistance is realized in the data information reading process.

Description

technical field [0001] The invention relates to the field of anti-radiation hardening of integrated circuits and non-volatile storage intersecting technologies, in particular to a magnetic memory read circuit based on C unit anti-single-event double-node flipping. Background technique [0002] Magnetic random access memory (Magnetic Rand om Access Memory, MRAM) has great application potential in the aerospace field in the future due to its non-volatile, low power consumption, fast access, inherent radiation resistance and other characteristics. MRAM is mainly composed of a memory cell array and peripheral read and write circuits. As a memory unit of MRAM, a magnetic tunnel junction (Magnetic Tunnel Junction, MTJ) is mainly composed of two ferromagnetic layers and a tunneling barrier layer sandwiched between them. One of the ferromagnetic layers has a fixed magnetization direction and is called a pinned layer; while the other ferromagnetic layer has a variable magnetization ...

AI Technical Summary

Problems solved by technology

[0003] The present invention aims at the above-mentioned problem of unreliable data reading due to double-node flipping of the differential signal reading circuit, which cannot be solved by the existing technical solutions for anti-single-event flipping

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