Magnetic memory reading circuit capable of resisting single-event upset based on C unit

Abstract

The invention discloses a magnetic memory reading circuit capable of resisting a single-event upset based on C unit. The magnetic memory reading circuit is characterized in that the input end of a pre-charging circuit module is connected with a pre-charging signal PRE; the output end of the pre-charging circuit module is connected with an internal node Q1, an internal node Q2, an internal node Q3and an internal node Q4 of a latch circuit module; the output end of the latch circuit module is connected with the input end of a read circuit separation module; the output end of the read circuit separation module is connected with a bit line BL1 and a bit line BL2 of a magnetic random access memory storage unit having data information to be read; the input end of an output circuit module is connected with the internal node Q1 and the internal node Q3 of the latch circuit module; and the output end OUT of the output circuit module is the output end of the magnetic memory reading circuit provided by the invention. According to the magnetic memory reading circuit, not only can a data information reading function be realized at high speed and low power consumption, but also the single eventupset resistance is realized in the data information reading process.

Description

technical field [0001] The invention relates to the field of anti-radiation hardening of integrated circuits and non-volatile storage intersecting technologies, in particular to a magnetic memory read circuit based on C unit anti-single event flipping. Background technique [0002] Magnetic random access memory (Magnetic Rand om Access Memory, MRAM) has great application potential in the aerospace field in the future due to its non-volatile, low power consumption, fast access, inherent radiation resistance and other characteristics. MRAM is mainly composed of a memory cell array and peripheral read and write circuits. As a memory unit of MRAM, a magnetic tunnel junction (Magnetic Tunnel Junction, MTJ) is mainly composed of two ferromagnetic layers and a tunneling barrier layer sandwiched between them. One of the ferromagnetic layers has a fixed magnetization direction and is called a pinned layer; while the other ferromagnetic layer has a variable magnetization direction an...

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Problems solved by technology

[0004] In view of the above-mentioned problem that the differential signal reading circuit is unreliable due to the phenomenon of single event reversal, the purpose of the present invention is to propose a magnetic memory read circuit based on C unit anti-single event reversal, to solve the above disadvantages , improve the radiation resistance of MRAM

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