Etching method of metal interconnect structure

A metal interconnection structure and metal wiring technology, which is applied in the manufacturing of electrical components, circuits, semiconductor/solid-state devices, etc., can solve the problems of poor device reliability and low manufacturing efficiency, and achieve improved reliability, improved manufacturing The effect of lithography alignment success rate

Active Publication Date: 2022-07-19
HUA HONG SEMICON WUXI LTD +1
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  • Application Information

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Problems solved by technology

[0005] The present application provides an etching method for a metal interconnection structure, which can solve the problems of poor device reliability and low manufacturing efficiency caused by the etching method for a metal interconnection structure provided in the related art

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  • Etching method of metal interconnect structure
  • Etching method of metal interconnect structure
  • Etching method of metal interconnect structure

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Embodiment Construction

[0027] The technical solutions in the present application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are a part of the embodiments of the present application, but not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative work fall within the protection scope of the present application.

[0028] In the description of this application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. The indicated orientation or positional relationship is based on the orientation or positional relationship shown in the accompanying drawings, which is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the indicated device or element must have a ...

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Abstract

The present application discloses an etching method for a metal interconnection structure, comprising: covering a photoresist on an anti-reflection layer other than a target area by a photolithography process, the anti-reflection layer is formed on a first dielectric layer, a first The dielectric layer is formed on the second dielectric layer, the second dielectric layer is formed on the third dielectric layer, and a metal connection is formed in the third dielectric layer; the anti-reflection of the target area is removed by etching with a reactive gas including a low etching ratio The protective layer is formed on the surface of the photoresist by etching with a reactive gas comprising fluorocarbons and hydrogen; and the protective layer is formed by etching with a reactive gas comprising fluorocarbons; The first dielectric layer and the second dielectric layer in the target area; the photoresist is removed. The reliability and manufacturing efficiency of the device can be improved by the etching method of the metal interconnect structure provided in the present application.

Description

technical field [0001] The present application relates to the technical field of semiconductor manufacturing, and in particular, to an etching method of a metal interconnect structure. Background technique [0002] In the back end of line (BEOL) process of semiconductor manufacturing, a copper-aluminum interconnect structure is used. The metal tungsten layer is planarized to form a tungsten contact via (via), and then an aluminum metal connection (contact) is formed on the contact via, and the aluminum metal connection and the copper metal connection under the dielectric layer are realized through the tungsten via interconnection. [0003] In the related art, the alignment pattern of the upper layer metal in the metal interconnection structure is formed in the through hole of the previous layer structure. During the etching process, in order to ensure the morphology of the through hole, the photoresist is usually etched. Select a reactive gas with a relatively high ratio a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/311H01L21/768
CPCH01L21/31138H01L21/31116H01L21/31144H01L21/76802
Inventor 马莉娜姚道州肖培
Owner HUA HONG SEMICON WUXI LTD
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