Etching method of metal interconnection structure

A technology of metal interconnection structure and metal wiring, which is applied in the manufacture of electrical components, circuits, semiconductors/solid-state devices, etc., can solve the problems of low manufacturing efficiency and poor reliability of devices, and improve manufacturing efficiency, reliability, and Effect of Lithographic Alignment Success Rate

Active Publication Date: 2020-12-08
HUA HONG SEMICON WUXI LTD +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The present application provides an etching method for a metal interconnection structure, which can solve the problems of poor device reliability and low manufacturing efficiency caused by the etching method for a metal interconnection structure provided in the related art

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  • Etching method of metal interconnection structure
  • Etching method of metal interconnection structure
  • Etching method of metal interconnection structure

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Embodiment Construction

[0027] The technical solutions in this application will be clearly and completely described below in conjunction with the accompanying drawings. Apparently, the described embodiments are part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.

[0028] In the description of this application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" etc. The indicated orientation or positional relationship is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, use a specific orientati...

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Abstract

The invention discloses an etching method for a metal interconnection structure, and the method comprises the steps: covering other regions, except a target region, of an anti-reflection layer with aphotoresist through a photoetching technology, forming an anti-reflection layer on a first dielectric layer, forming the first dielectric layer on a second dielectric layer, forming the second dielectric layer on a third dielectric layer, and forming a metal connecting line in the third dielectric layer; removing the anti-reflection layer of the target region by etching with a reaction gas with alow etching ratio; etching through a reaction gas containing a fluorocarbon; etching by using a reaction gas containing a fluorocarbon and hydrogen to form a protective layer on the surface of the photoresist; etching to remove the first dielectric layer and the second dielectric layer in the target region by using the reaction gas containing the fluorocarbon; and removing the photoresist. Throughthe etching method of the metal interconnection structure provided by the invention, the reliability and the manufacturing efficiency of the device can be improved.

Description

technical field [0001] The present application relates to the technical field of semiconductor manufacturing, and in particular to an etching method of a metal interconnection structure. Background technique [0002] In the back end of line (BEOL) process of semiconductor manufacturing, a copper-aluminum interconnection structure is used. The manufacturing process is usually to form a via hole in the dielectric layer, and then fill the via hole with a metal tungsten layer, and then Planarize the metal tungsten layer to form a tungsten contact via (via), and then form an aluminum metal connection (contact) on the contact via, and realize the aluminum metal connection and the copper metal connection under the dielectric layer through the tungsten via hole interconnection. [0003] In the related art, the alignment pattern of the upper metal in the metal interconnection structure is formed in the through hole of the previous layer structure. During the etching process, in orde...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/311H01L21/768
CPCH01L21/31138H01L21/31116H01L21/31144H01L21/76802
Inventor 马莉娜姚道州肖培
Owner HUA HONG SEMICON WUXI LTD
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