Acquisition method of light intensity threshold and detection method of auxiliary graphic development

A technology of auxiliary graphics and light intensity threshold, which is applied in the detection of auxiliary graphics development and the acquisition of light intensity threshold, which can solve the problems of low accuracy and small key size

Active Publication Date: 2021-02-12
南京晶驱集成电路有限公司
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] At present, the detection of the development of auxiliary graphics is mainly carried out through detection tools with OPC models. Since the critical dimension (CD) of auxiliary graphics is small, it cannot be directly measured. The threshold of the OPC model is based on other graphics (such as main graphics). Critical dimension extrapolation, therefore, the accuracy of the detection tool for the development of auxiliary graphics is very low

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Acquisition method of light intensity threshold and detection method of auxiliary graphic development
  • Acquisition method of light intensity threshold and detection method of auxiliary graphic development
  • Acquisition method of light intensity threshold and detection method of auxiliary graphic development

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0044] At present, whether the auxiliary graphics are developed is mainly detected by a detection tool with an OPC model. The detection tool is a lithography rule check (Lithography Rule Check, LRC) tool, which can use the OPC model to check the deficiencies in the test graphics. come out. see figure 1 and figure 2 , the test pattern is detected by a detection tool having an OPC model, and the test pattern includes a main test pattern 101 and auxiliary test patterns 102 arranged on both sides of the main test pattern 101, wherein the main test pattern 101 is used as a main pattern, so The auxiliary test pattern 102 is used as an auxiliary pattern. When it is detected that the light intensity at the auxiliary test pattern 102 exceeds the threshold Y1 (see figure 2 ), it is determined that the auxiliary test pattern 102 will be developed during the photolithography process; when the light intensity at the auxiliary test pattern 102 does not exceed the threshold Y1 (see fig...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
widthaaaaaaaaaa
Login to view more

Abstract

The present invention provides a method for obtaining a light intensity threshold and a method for detecting the development of auxiliary patterns, wherein the method for obtaining the light intensity threshold includes: setting a test pattern group on a test mask, and the test pattern includes a main pattern and Auxiliary pattern, the width of the main pattern in the test pattern in the test pattern group gradually increases or decreases; utilizes the test mask to carry out the photolithography of the wafer; screens out the test pattern developed by the auxiliary pattern and its adjacent The undeveloped test pattern of the auxiliary pattern; the simulated test pattern of the selected auxiliary pattern and the undeveloped test pattern of the auxiliary pattern are simulated to obtain the maximum light intensity value at the auxiliary pattern in the two test patterns; The maximum light intensity value at the auxiliary pattern in the test pattern where the auxiliary pattern has not been developed is set as the light intensity threshold. Setting the obtained light intensity threshold as the threshold of the OPC model can improve the accuracy of detection of the development of the auxiliary graphics.

Description

technical field [0001] The invention relates to the technical field of integrated circuit manufacturing, in particular to a method for acquiring a light intensity threshold and a method for detecting the development of auxiliary graphics. Background technique [0002] In the layout of semiconductor design, the lithography process window (Process Window) of dense (dense) graphics and sparse (ISO) graphics is generally inconsistent. Therefore, the exposure conditions suitable for dense graphics in the layout are not necessarily suitable for sparse graphics. exposure. Therefore, for complex layouts containing both dense graphics and sparse graphics, the common process window (Common Window) is generally relatively small, and the addition of auxiliary graphics (Scatting Bar) can solve the technical problem of small process windows. [0003] Inserting auxiliary graphics refers to placing auxiliary graphics bars around the main graphics to improve the quality of the main graphics...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): G03F1/36G03F1/84G03F7/20
CPCG03F1/36G03F1/84G03F7/70441G03F7/70616
Inventor 魏来罗招龙李可玉朱安康林建佑
Owner 南京晶驱集成电路有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products