Light intensity threshold acquisition method and auxiliary pattern development condition detection method

Abstract

The invention provides a light intensity threshold acquisition method and an auxiliary pattern development condition detection method. The light intensity threshold acquisition method comprises the steps of setting a test pattern group on a test photomask, and enabling a test pattern to comprise a main pattern and an auxiliary pattern, and enabling the widths of the main patterns in the test patterns in the test pattern group to be gradually increased or decreased, photoetching a wafer by using the test photomask, screening out the test patterns with the developed auxiliary patterns and the test patterns with the undeveloped auxiliary patterns adjacent to the test patterns, simulating the screened test patterns of which the auxiliary patterns are developed and the test patterns of which the auxiliary patterns are not developed so as to obtain the maximum light intensity value of the auxiliary patterns in the two test patterns, and setting the maximum light intensity value at the auxiliary pattern in the test pattern of which the auxiliary pattern is not developed as a light intensity threshold. The obtained light intensity threshold value is set as the threshold value of the OPC model, so that the accuracy of auxiliary pattern development condition detection can be improved.

Description

technical field [0001] The invention relates to the technical field of integrated circuit manufacturing, in particular to a method for acquiring a light intensity threshold and a method for detecting the development of auxiliary graphics. Background technique [0002] In the layout of semiconductor design, the lithography process window (Process Window) of dense (dense) graphics and sparse (ISO) graphics is generally inconsistent. Therefore, the exposure conditions suitable for dense graphics in the layout are not necessarily suitable for sparse graphics. exposure. Therefore, for complex layouts containing both dense graphics and sparse graphics, the common process window (Common Window) is generally relatively small, and the addition of auxiliary graphics (Scatting Bar) can solve the technical problem of small process windows. [0003] Inserting auxiliary graphics refers to placing auxiliary graphics bars around the main graphics to improve the quality of the main graphics...

AI Technical Summary

Problems solved by technology

[0005] At present, the detection of the development of auxiliary graphics is mainly carried out through detection tools with OPC models. Since the critical dimension (CD) of auxiliary graphics is small, it cannot be directly measured. The threshold of the OPC model is based on other graphics (such as main graphics). Critical dimension extrapolation, therefore, the accuracy of the detection tool for the development of auxiliary graphics is very low

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