Multilayer wafer bonding method

Abstract

The invention provides a multilayer wafer bonding method, which comprises the following steps: providing a first to-be-bonded wafer and a first slide glass wafer, wherein the first to-be-bonded wafercomprises a first substrate, a first dielectric layer located on the surface of one side of the first substrate and a first metal layer embedded in the first dielectric layer, and the first slide glass wafer comprises a first slide glass substrate and a first slide glass dielectric layer positioned on the surface of one side of the first slide glass substrate; bonding the first to-be-bonded waferwith the first slide glass wafer, wherein the first dielectric layer is in contact with the first slide glass dielectric layer; forming a second dielectric layer and a first bonding pad on the surfaceof one side, far away from the first dielectric layer, of the first substrate, wherein the first bonding pad is electrically connected with the first metal layer; bonding the second dielectric layerof the first to-be-bonded wafer with a bottom wafer; and removing the first slide glass wafer, and bonding the first dielectric layer with the second to-be-bonded wafer. According to the method, the alignment precision between the wafer and the slide glass wafer can be improved, and the bonding stability of the wafer and the slide glass wafer is less influenced by temperature.

Description

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AI Technical Summary

Benefits of technology

This patented technology allows for better control over how well two layers (a top layer called an oxide) get together when they're joined without any misalignment or displacement issues. It achieves this through specific techniques like heat treatment at certain temperatures before joining them. By controllably adjusting these processes based upon factors such as ambient temperature, the resulting structure has improved performance characteristics.

Problems solved by technology

This patented technical problem addressed in the patents describes how current methods of multiple layer wafer bonds have limitations such as complex wire routing or difficulty opening up certain devices due to limited alignment accuracies caused by temporary adhesive materials with poor thermal performance during processing steps like deposition processes.

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