Unlock instant, AI-driven research and patent intelligence for your innovation.

Ferroelectric memory cell access

A ferroelectric memory and memory technology, applied in static memory, digital memory information, information storage, etc., can solve non-volatile problems

Active Publication Date: 2022-03-22
MICRON TECH INC
View PDF8 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

FeRAM may be able to achieve densities similar to volatile memory, but may have non-volatile properties due to the use of ferroelectric capacitors as storage devices

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Ferroelectric memory cell access
  • Ferroelectric memory cell access
  • Ferroelectric memory cell access

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] According to aspects of the invention, memory cells can be accessed (eg, read, written, refreshed, or any combination thereof). In some memory architectures, memory cells (eg, ferroelectric memory cells) can be coupled with digit lines, word lines, and plates. In some cases, a single board may be common to (eg, shared by, coupled with) multiple memory units. For example, such an architecture can reduce the complexity of control schemes and associated circuitry (eg, decoder circuitry) compared to having each memory cell of a board that is uniquely controlled individually.

[0023] In such a memory array, memory cells may be arranged in columns and rows, where each row of memory cells corresponds to (eg, coupled to) the same word line, and each column of memory cells corresponds to (eg, coupled to) the same digit line. ). In some memory architectures, accessing a memory cell (e.g., reading a logic state stored in or writing a logic state to a memory cell) may include ap...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

This application relates to ferroelectric memory cell access. In some examples, during the first portion of the access procedure, the voltages of the digit and word lines coupled to the memory cell can be increased while the voltage of the plate coupled to the memory cell can be kept constant, which can Sensing of a logic state stored by the memory cell prior to the access procedure is supported and may cause a first logic state to be written to the memory cell. The voltage of the plate can then be increased, and the digit line can then be coupled with the plate. Since the first logic state was previously written to the memory cell, there may not be a need to subsequently write the target logic state to the memory cell unless the target logic state is different from the first logic state.

Description

[0001] cross reference [0002] This patent application asserts U.S. Patent Application Serial No. 16 / 511,423, filed July 15, 2019, by Di Vincenzo, entitled "FERROELECTRIC MEMORY CELL ACCESS" No. , assigned to the present assignee and expressly incorporated herein by reference in its entirety. technical field [0003] The technical field relates to ferroelectric memory cell access. Background technique [0004] The following generally relates to systems including at least one memory device and more specifically to ferroelectric memory cell access. [0005] Memory devices are widely used to store information in a variety of electronic devices such as computers, wireless communication devices, cameras, digital displays, and the like. Information is stored by programming different states of the memory device. For example, binary devices most commonly store one of two states, usually represented by a logical one or a logical zero. In other devices, more than two states may ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/22
CPCG11C11/2275G11C11/2257G11C11/221G11C11/2273G11C11/2255G11C11/2259G11C11/2293G11C11/2297G11C8/08
Inventor U·迪温琴佐
Owner MICRON TECH INC