Unlock instant, AI-driven research and patent intelligence for your innovation.

Low-power-consumption high-switching-rate charge pump circuit

A technology of switching rate and charge pump, applied in the field of phase-locked loop, can solve the problem of multiple power consumption of the circuit

Active Publication Date: 2021-02-09
GUANGDONG UNIV OF TECH
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Some charge pump circuits with high switching rates proposed in the prior art require an external bias current, that is, different branches need to be always on, but the function of the branch is only to provide a certain operating point and the output current of the charge pump, so It will make the circuit a lot of unnecessary power consumption, especially when the required current is large and the phase-locked loop is not locked, the overall power consumption of the circuit is three times the actual useful power consumption, and when the phase-locked loop is locked He also has a constant branch that consumes current

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Low-power-consumption high-switching-rate charge pump circuit
  • Low-power-consumption high-switching-rate charge pump circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0044] see figure 1 , the present invention provides a charge pump circuit with low power consumption and high switching rate, including voltage input terminals UP and DN, current output terminal IOUT, current bias input voltage BIAS, first stage amplifier A1, first capacitor C1, current regulation MOS transistors M1, M2, M3 and M4, substrate adjustable MOS transistors M5, M6, M7 and M8, switch MOS transistors M10, M11, M12 and M13, the first inverter INV1 and the second inverter INV2, wherein :

[0045] The voltage input terminal UP of the charge pump circuit is coupled to the first inverter INV1 and the output of the first inverter INV1 obtains another voltage input terminal UPB. At the same time, the voltage input terminal UP is coupled to the gate of the switch MOS transistor M10 and the gate of the substrate adjustable MOS transistor M8, and the voltage input terminal UPB is coupled to the gate of another switch MOS transistor M11 and the substrate adjustable MOS transis...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a low-power-consumption and high-switching-rate charge pump circuit, which utilizes a structure similar to a current source, so that the current of a charge pump can be self-supplied without being provided by other modules, one branch is cut off by using a capacitor, and the function of the charge pump circuit can be maintained while no static current exists; and therefore,when the phase-locked loop is locked, except that the amplifier has a little power consumption, other parts of the charge pump circuit do not have power consumption or have extremely low power consumption. In order to reduce the leakage power consumption when the switch is closed, the threshold value of the switch tube is changed by changing the substrate voltage, and the substrate of the switchtube is connected to the potential opposite to that of the source electrode when the switch tube is closed, so that the conduction threshold value of the switch tube is increased, and the leakage current is reduced; and in addition, the circuit provided by the invention can realize current self-sufficiency, and the current can be adjusted by adjusting the size of the MOS transistor.

Description

technical field [0001] The invention relates to the technical field of phase-locked loops, in particular to a charge pump circuit with low power consumption and high switching rate. Background technique [0002] The charge pump circuit is a circuit analog interface that connects the internal digital circuit part and the analog circuit part of the digital-analog hybrid phase-locked loop, and converts the phase difference pulse output by the frequency and phase detector into the charging and discharging current of the low-tube filter. It plays an important role in the application of conversion, motor drive and storage circuits. [0003] Some charge pump circuits with high switching rates proposed in the prior art require an external bias current, that is, different branches need to be always on, but the function of the branch is only to provide a certain operating point and the output current of the charge pump, so It will make the circuit a lot of unnecessary power consumpti...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H02M3/07
CPCH02M3/07H02M1/0054Y02B70/10
Inventor 钟鸣熊晓明梁润华黄泽武
Owner GUANGDONG UNIV OF TECH