Memory and method of forming the same

Abstract

The invention provides a memory and its forming method. A node contact window is defined by a bit line and an insulating line, and the contact plug filled in the node contact window also protrudes upward from the node contact window, and a spacer structure is further used to space adjacent contact plugs, and the spacer structure The first gap is also formed in the contact plug, which is beneficial to reduce the dielectric constant of the dielectric material between the adjacent contact plugs, and effectively improve the parasitic effect of the device.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a memory and a forming method thereof. Background technique [0002] With the development of semiconductor technology, the density of semiconductor elements in integrated circuits has increased, and the spacing between adjacent semiconductor elements has also decreased, resulting in the parasitic effects between adjacent conductive parts becoming more and more incompatible. ignore. [0003] Specifically, for a dynamic random access memory (Dynamic Random Access Memory, DRAM), it usually has a storage cell array, the storage cell array includes a plurality of storage cells arranged in an array, and the memory also has multiple Each bit line is electrically connected to a corresponding memory cell, and the memory also includes a storage capacitor for storing charge representing stored information, and the memory cell can be inserted through a contact The storage capacitors...

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a memory to solve the problem of large parasitic effects in the existing memory

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