34results about How to "Improve parasitic effects" patented technology

A hybrid broadband power amplifier module design is disclosed. In a power amplifier design, low impedance transmission lines are typically needed at the input and output of the transistor to match for its optimum source and load impedance. The peripheral of the GaN (Gallium Nitride) transistor is very small due to the high power density of the GaN transistor. The transmission line, for example a microstrip line, needs to be very wide to achieve low impedance on ceramic substrates such as Alumina. The dimensional mismatch from the low impedance transmission line to the transistor causes additional parasitic effect to the matching networks and limits the bandwidth of the amplifier. Capacitor materials are typically very high in dielectric constant; hence a single layer capacitor with small dimensions equalizes to a low impedance transmission line. Selected capacitors with proper dimensions can be used as the low impedance transmission lines in the matching networks. They will have comparable width to the GaN transistor and minimize the parasitic effect. The wavelength inside the capacitor will also be very short due to the high dielectric constant; hence the matching network can be much shorter. A compact hybrid amplifier module has been built in a small package with the GaN transistor, capacitor matching networks and other necessary circuits inside. More than an octave bandwidth can be achieved with this new scheme.

The invention discloses a method for biologically preventing and controlling micromelalopha troglodyte by using tetrastichus nigricoxae yang and belongs to the technical field of forest conservation and biological prevention and control. The method comprises the following technical steps of (1) collecting and preserving bees; (2) selecting and preserving substitutive hosts; (3) breeding the tetrastichus nigricoxae yang; (4) rejuvenating the bees; (5) releasing the tetrastichus nigricoxae yang; and (6) continuously controlling the micromelalopha troglodyte. The method is simple and convenient to operate and efficient in system, excellent bred bees are selected to substitute the hosts, the technical problem of artificial scale bee breeding is solved, an appropriate bee releasing technology is researched, and the preventing and controlling effect is remarkable. The bees are ordinarily released for three times in a low micromelalopha troglodyte population period to prevent and control a next generation of micromelalopha troglodyte pupas, injurious insects can be basically controlled, and a full-year disaster-free and insect-existing control target is achieved.

The invention belongs to the technical field of biology, and particularly relates to a device for detecting the parasitic ability of parasitic wasps and a method for evaluating the parasitic ability.The device for detecting the parasitic ability of the parasitic wasps comprises a parasitic wasp hive and a host tank. The parasitic wasp hive and the host tank are combined and connected with each other; a ventilation hole and a feed hole are formed in the top of the parasitic wasp hive; the host tank is matched with the parasitic wasp hive, face plates on at least one surface of the host tank are ventilated, and a top plate of the host tank can be detached. The device for detecting the parasitic ability of the parasitic wasps and the method for evaluating the parasitic ability have the advantages that the combined device is convenient to assemble, detach and operate, simple in structure and low in manufacturing cost; the device is applicable to detecting the parasitic ability and parasitic effects of diversified parasitic wasps and is high in applicability; the method for evaluating the parasitic ability of the parasitic wasps can be implemented by the aid of the device, the parasitic ability of the parasitic wasps can be quickly and accurately tested by the aid of the method, accordingly, bases and technical support can be provided to realizing pest control effects by the aid ofthe parasitic wasps, and the technical problem of difficulty in monitoring and detecting the wasp breeding quality can be solved by the aid of the device and the method.

The invention discloses a method for reproducing Bracon adoxophyesi Mimanikawa indoor. Under the conditions that the temperature is 25 DEG C, and the ratio of light to darkness is 14 h to 10 h, the Bracon adoxophyesi Mimanikawa is placed into an insect rearing cage with a sleeve, wherein the specification is 55 cm*55 cm*55 cm, the Bracon adoxophyesi Mimanikawa is fed by 15% of hydromel, fodder with insects is taken out from a feeding plate with 5-6-instar rice moth larvae every 3 days to be smoothly laid at the bottom of a plastic box to enable the height of the fodder with the insects to be approximately 1.5 cm, the plastic box without a cover is placed in a parasitoid wasp insect rearing cage, and the parasitoid wasp utilizes the rice moth as the host. The plastic box is taken out 3 days later, and the plastic box is covered by the cover, the emergence of the parasitoid wasp of the next generation begins to occur after 12 days, and the emergence time lasts more than 7 days. The method is simple in operation and high in efficiency, and the mass reproduction of the Bracon adoxophyesi Mimanikawa can be achieved easily.

The invention discloses a method for artificial breeding of larch sclerodermus sp. and application of larch sclerodermus sp. for prevention of massicus raddei. Drone pupae of Bombus hypocrita are selected as substitute hosts of the larch sclerodermus sp., meanwhile, the breeding conditions are regulated and controlled, and thus the parasitic ability of the bred larch sclerodermus sp. is obviously improved. The larch sclerodermus sp. is applied to prevention of the massicus raddei in the Northeast China region, and the parasitic effect of the indoor larch sclerodermus sp. in the massicus raddei larvae of 1-3 years old is good.

The invention discloses lecanicillium attenuatum and application of the lecanicillium attenuatum to controlling heterodera glycines. The lecanicillium attenuatum is lecanicillium attenuatum HNLA1306, which is preserved in CGMCC (China General Microbiological Culture Collection Center) with the preservation number of CGMCC No.9220. A fermentation liquor of the lecanicillium attenuatum can remarkably restrain incubation of eggs of heterodera glycines and has a strong killing effect on J2 larvas; the conidia of the lecanicillium attenuatum have a good parasitic effect on second-stage juveniles of bemisia tabaci; the lecanicillium attenuatum can be used for biological control of crop nematodes and bemisia tabaci.

The invention discloses a large-scale production method of tamarixia radiate. The method comprises the steps that s1, carrier plants are managed, tender shoots are cultivated, and the carrier plants are calamondin; s2, diaphorina citri is inoculated to the carrier plants in a diaphorina citri breeding cage, and nymphs are bred; s3, the carrier plants with the 4-5-age diaphorina citri nymphs are moved into a parasitic wasp breeding cage, tamarixia radiate adults are put into the parasitic wasp breeding cage, the inoculation quantity ratio of tamarixia radiate to the diaphorina citri nymphs is 1: 10-20, and the tamarixia radiate adults are bred and collected; and s4, the carrier plants are cleaned and recovered. The carrier plants developed by the method are calamondin, the carrier plants shorten the growth cycle, the breeding capacity of the diaphorina citri and the production capacity of parasitic wasps are greatly improved, and the net yield and the female ratio of the tamarixia radiate are effectively improved according to the inoculation proportion of calamondin+tamarixia radiate to the diaphorina citri nymphs.

The invention discloses a vertical parasitic type plug-and-play (PNP) audion in a germanium silicon heterojunction bipolar transistor (HBT) technology. A window defining germanium before growth in a trapezoid shape is adopted and germanium silicon layers in an emitter region can be in a polycrystalline structure, and therefore dosage concentration in the emitter region can be improved, emitting efficiency and amplification coefficient of a device is improved, and cut-off frequency of the device is increased. Due to the fact that the advanced deep hole contact technology and the P-type buried layer technology are adopted, area of an active region can be greatly saved, parasitic effect of the device is improved, collector resistance of the device is reduced, and performance of the device is improved. The invention further discloses a manufacture method of the vertical parasitic type PNP audion in the germanium silicon HBT technology. The manufacture method can be integrated with the technology of the PNP audion in the germanium silicon HBT technology and reduce production cost.

The invention discloses a method for artificially breeding sclerodermus and application of the sclerodermus in prevention and control of trunk-boring insect pests on forest trees. According to the method, larvae of paraglenea fortunei are selected as substitute hosts of sclerodermus, and the breeding condition is regulated, so that the parasitizing capability of the sclerodermus obtained in breeding is remarkably improved, and the viability of the slerodermus is not weakened even the sclerodermus is continuously bred indoors for five generations; and the sclerodermus is applied to prevent and control monochamus alternatus hope, and has a good parasitizing effect for larvae of paraglenea fortunei in 1-3 ages.

The invention discloses a secondary epitaxy method of an N-type heavily-doped thin-layer gallium nitride material. The method comprises the following steps: (1) selecting an epitaxial material, and placing the epitaxial material on a base in MOCVD epitaxial growth equipment; (2) setting the pressure of a reaction chamber, heating the reaction chamber to a preset temperature in an ammonia gas atmosphere, and then continuously introducing an indium source; (3) keeping the pressure, the temperature, the indium source flow and the ammonia gas flow of the reaction chamber unchanged, and introducing a gallium source and silane; adjusting the flow of the gallium source and the indium source, setting the growth rate, and starting secondary epitaxy of the N-type heavily doped thin layer GaN material; (4) keeping the pressure, the temperature and the ammonia gas flow of the reaction chamber unchanged, closing the gallium source and the indium source, and continuously introducing silane for a period of time; and (5) closing the silane, cooling to room temperature under the protection of ammonia gas atmosphere, and taking out the secondary epitaxial material. The N-type heavily-doped thin-layer GaN material is good in surface appearance and high in crystallization quality, and ohmic contact resistance of a high-frequency GaN power device can be reduced.

The invention provides a method for preventing derris trifoliata in a mangrove forest, and belongs to the technical field of mangrove forest protection. The parts being 10-20 cm above rhizomes of thederris trifoliata are cut off at the lowest tide level all day long in the mangrove forest, then an acetic acid solution is sprayed to the rhizomes of the derris trifoliata once, and artificially-bredcoleopteran weevils insects are placed on the derris trifoliata; and semen cuscutae stems are placed at the canopy positions, on the water surface, of the derris trifoliata, and after semen cuscutaeis successfully parasitized on the derris trifoliata, an acetic acid solution is sprayed to the rhizomes of the derris trifoliata again. Semen cuscutae and coleopteran weevils insects are introduced and cooperate with acetic acid root spraying, prevention of the derris trifoliata is effectively achieved, operation is easy, environment friendliness is achieved, and the derris trifoliata is thoroughly eradicated from the source.

The invention discloses a strain purified silicon substrate for semiconductor quantum calculation and a forming method thereof, belongs to the technical field of semiconductors, and aims to solve theproblems that epitaxial purified silicon is greatly influenced by natural silicon isotope components of a substrate and the electron mobility of a purified silicon layer is low in the prior art. The strain purified silicon substrate comprises a natural silicon substrate, an insulating layer and a strain purification silicon layer, and tensile stress is introduced into the strain purification silicon layer. The forming method comprises the following steps: epitaxially forming a plurality of silicon-germanium buffer layers on a base substrate, gradually increasing the germanium doping concentration in the plurality of silicon-germanium buffer layers, and forming a strain purification silicon layer on the silicon-germanium buffer layers to obtain a donor substrate; providing a natural siliconsubstrate; forming an insulating layer on the donor substrate and/or the natural silicon substrate; and bonding the donor substrate with a natural silicon substrate, and removing the silicon-germanium buffer layer and the base substrate to obtain the strain purified silicon substrate. The strain purified silicon substrate and the forming method can be used for semiconductor quantum calculation.

The invention discloses an artificial breeding method of piliferocallus hezhangensis yang et zhan,sp.n.. The method comprises the following steps of selecting larvae or pupae of bees or wasps as substitute hosts of piliferocallus hezhangensis yang et zhan,sp.n., screening out proper breeding conditions, and successfully achieving artificial large-scale breeding of piliferocallus hezhangensis yanget zhan,sp.n..

The invention discloses a strain purified silicon substrate for semiconductor quantum calculation and a forming method thereof, belongs to the technical field of semiconductors, and aims to solve theproblems that epitaxial purified silicon is greatly influenced by natural silicon isotope components of a substrate and the electron mobility of the purified silicon is low in the prior art. The purified silicon germanium substrate comprises a natural silicon supporting substrate, an insulating layer, a purified silicon germanium layer and a purified silicon layer which are stacked in sequence. The forming method comprises the following steps: epitaxially forming a plurality of silicon-germanium buffer layers and purified silicon-germanium layers on a base substrate to obtain a donor substrate; providing a natural silicon support substrate; forming at least one insulating layer on the donor substrate and/or the natural silicon support substrate; bonding the donor substrate with a natural silicon support substrate, and removing the base substrate and the multiple silicon-germanium buffer layers or removing the base substrate, the multiple silicon-germanium buffer layers and part of thepurified silicon-germanium layer to obtain a purified silicon-germanium substrate; and epitaxially forming a purified silicon layer on the purified silicon germanium substrate to obtain the strain purified silicon substrate. The purified silicon germanium substrate and the forming method thereof can be used for semiconductor quantum calculation.

The embodiment of the invention relates to the technical field of semiconductors, and provides a simulation method of an integrated circuit and a simulation system thereof, the simulation method is applied to a server, and the method comprises the following steps: receiving a unit list provided by a client; receiving an initial netlist provided by the client, wherein the initial netlist comprises a plurality of semiconductor devices and a connection relationship between the semiconductor devices in the unit list; importing parasitic parameter information of at least part of semiconductor devices in the unit list into the initial netlist to generate a result netlist; and simulating the integrated circuit based on the result netlist. The embodiment of the invention is at least beneficial to improving the simulation precision of simulating the integrated circuit.

A switch apparatus is provided. The switch apparatus includes a signal control switch, a switch circuit, a blocking capacitor and a surge current dissipation circuit. The signal control switch and the switch circuit are respectively controlled by a first control signal and a second control signal to be turned on or off. The blocking capacitor is serially coupled between the switch circuit and a reference voltage end. The surge current dissipation circuit includes a Zener diode circuit or at least one diode circuit, and the at least one diode circuit has one or more diodes coupled in series. The one or more diodes coupled in series are coupled between two ends of the surge current dissipation circuit according to a first polarity direction.