Flexible indium zinc oxide thin film transistor and manufacturing method thereof

A thin film transistor, indium zinc oxide technology, applied in transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve the problems of difficult to use high-frequency devices, low mobility, etc., achieve thin structure, wide application prospects, and improve control. effect of ability

Inactive Publication Date: 2019-12-13
TIANJIN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The invention provides a flexible metal oxide thin film transistor and its preparation method, which solves the problems of low mobility and difficulty in being used in high-frequency devices in the traditional flexible organic thin film transistors in the prior art

Method used

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  • Flexible indium zinc oxide thin film transistor and manufacturing method thereof
  • Flexible indium zinc oxide thin film transistor and manufacturing method thereof

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Embodiment Construction

[0026] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in combination with specific examples and with reference to the accompanying drawings.

[0027] like figure 1 As shown, the present invention is a kind of flexible indium zinc oxide thin film transistor, and its structure is as follows from bottom to top: flexible substrate (PET) 1, aluminum film (Al) 2 as grid, as gate insulating layer 3 through anodic oxidation Aluminum oxide film (Al 2 o 3 ), indium zinc oxide film (IZO) 4 and indium tin oxide (ITO) drain 6 source 5 electrodes, the top is covered with a layer of silicon dioxide (SiO 2 ) 7 as the device passivation layer.

[0028] The specific production process is as follows:

[0029] a. Choose PET flexible material as the substrate, first put the PET into a beaker filled with acetone solution, then clean it in an ultrasonic cleaner for 5 minutes, and the...

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Abstract

The invention discloses a flexible metal oxide thin film transistor and a manufacturing method thereof. A PET substrate is plated with an aluminum thin film and an aluminum oxide thin film formed through anodic oxidation, the aluminum thin film and the aluminum oxide thin film serve as a gate electrode and a gate electrode insulating layer respectively, an indium zinc oxide thin film is deposited,an indium tin oxide (ITO) source-drain electrode is prepared through a lift-off method, and finally silicon dioxide is deposited to serve as a device passivation layer. The flexible metal oxide thinfilm transistor is suitable for a flexible integrated circuit, and the transistor has good performance and high working frequency. Moreover, the device has the advantages of light and thin structure,bendability and foldability, strong mechanical shock resistance and the like, and has a wide application prospect in the fields of flexible display equipment, intelligent wearing and photoelectric devices.

Description

technical field [0001] The invention relates to a flexible metal oxide thin film transistor and a preparation method thereof. Background technique [0002] With its unique ductility and high-efficiency and low-cost manufacturing process, flexible electronic devices have broad application prospects in information, energy, medical, national defense and other fields. In recent years, flexible electronic technology has shown a rapid development trend. The research on flexible electronic devices that can withstand large deformations such as tension, compression, and bending has become a research hotspot in the fields of electronics, mechanics, materials, and physics. It represents a recent development direction of a new generation of semiconductor devices. It not only has the performance of traditional rigid circuit board-based systems, but also has the performance of being stretched like a rubber band, twisted like a rope, and folded like a paper. However, traditional flexible...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/786H01L21/336H01L29/423H01L29/49
CPCH01L29/42384H01L29/4908H01L29/66969H01L29/7869
Inventor 秦国轩刘家立
Owner TIANJIN UNIV
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