Memory and forming method thereof

A memory and bit line technology, applied in the field of memory and its formation, can solve problems such as large parasitic effects of memory, and achieve the effects of reducing dielectric constant, increasing top surface contact area, and improving parasitic effects

Active Publication Date: 2021-02-19
FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a memory to solve the problem of large parasitic effects in the existing memory

Method used

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  • Memory and forming method thereof
  • Memory and forming method thereof
  • Memory and forming method thereof

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Embodiment Construction

[0073] The core idea of ​​the present invention is to provide a memory, including a substrate, and a plurality of bit lines and a plurality of insulating lines formed on the substrate. Wherein, the intersection of the bit line and the insulating line defines a plurality of node contact windows on the substrate, and the node contact windows are filled with contact plugs. Further, a spacer structure is also formed between the tops of adjacent contact plugs, and gaps are formed in the spacer structures, so as to reduce the dielectric constant of the spacer structures, thereby improving the distance between adjacent contact plugs. parasitic effects between them.

[0074] The memory and its forming method proposed by the present invention will be further described in detail below with reference to the drawings and specific embodiments. The advantages and features of the present invention will become clearer from the following description. It should be noted that all the drawings ...

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Abstract

The invention provides a memory and a forming method thereof. A node contact window is defined by utilizing a bit line and an insulating line, a contact plug filling the node contact window is enabledto protrude upwards out of the node contact window, adjacent contact plugs are further spaced by utilizing a spacing structure, and a first gap is further formed in the spacing structure. Therefore,the dielectric constant of the dielectric material between the adjacent contact plugs is reduced, and the parasitic effect of the device is effectively improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a memory and a forming method thereof. Background technique [0002] With the development of semiconductor technology, the density of semiconductor elements in integrated circuits has increased, and the spacing between adjacent semiconductor elements has also decreased, resulting in the parasitic effects between adjacent conductive parts becoming more and more incompatible. ignore. [0003] Specifically, for a dynamic random access memory (Dynamic Random Access Memory, DRAM), it usually has a storage cell array, the storage cell array includes a plurality of storage cells arranged in an array, and the memory also has multiple Each bit line is electrically connected to a corresponding memory cell, and the memory also includes a storage capacitor for storing charge representing stored information, and the memory cell can be inserted through a contact The storage capacitors...

Claims

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Application Information

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IPC IPC(8): H01L27/108H01L21/8242H01L21/768
CPCH01L21/76897H10B12/30H10B12/485
Inventor 陈肯利陈琮文
Owner FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD
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