Unlock instant, AI-driven research and patent intelligence for your innovation.

Semiconductor device

A semiconductor, storage area technology, applied in redundant codes for error detection, instrumentation, digital memory information, etc., to solve problems such as errors

Inactive Publication Date: 2021-02-26
SK HYNIX INC
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If the data transfer speed of semiconductor devices becomes faster, the possibility of errors occurring when transferring data in semiconductor devices increases

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device
  • Semiconductor device
  • Semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0018] Hereinafter, various embodiments of the present disclosure are described with reference to the accompanying drawings. However, the embodiments described herein are for illustrative purposes only and are not intended to limit the scope of the present disclosure.

[0019] Such as figure 1 As shown, the semiconductor device 1 according to the embodiment may include a first control circuit 10 , an error correction circuit 20 , a first core circuit 30 , a second control circuit 40 , and a second core circuit 50 .

[0020] During the write operation activated by the first to Mth commands CMD, the first control circuit 10 may generate first and second write enable signals WT_EN, wherein the first and second write enable signals WT_EN One of the second write enable signals WT_EN according to the Nth address signal ADD logic level and is selectively enabled. During the read operation activated by the first to Mth commands CMD, the first control circuit 10 may generate first a...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Disclosed is a semiconductor device comprising first and second memory regions spaced apart from each other and a fail information storage region disposed between the first and second memory regions.A parity including error information on data is stored in a first parity region of the fail information storage region while a write operation is applied to the first memory region. The parity is stored in a second parity region of the fail information storage region while the write operation is applied to the second memory region. An error of the data is corrected by the parity stored in the first parity region while a read operation is applied to the first memory region. The error of the data is corrected by the parity stored in the second parity region while the read operation is applied tothe second memory region.

Description

[0001] Cross References to Related Applications [0002] This application claims priority from Korean Application No. 10-2019-0103362 filed on Aug. 22, 2019, the entire contents of which are hereby incorporated by reference. technical field [0003] Embodiments of the present disclosure relate to a semiconductor device, and more particularly, to a semiconductor device for performing an error correction operation of data. Background technique [0004] Recently, a DDR2 scheme, a DDR3 scheme, a DDR4 scheme, etc. have been used to increase the operating speed of a semiconductor device. The DDR2 scheme, the DDR3 scheme, or the DDR4 scheme may be designed to receive or output multi-bit data, such as 4-bit data, 8-bit data, 16-bit data, or 32-bit data, during each clock cycle time. If the data transfer speed of the semiconductor device becomes faster, the possibility of errors occurring when transferring data in the semiconductor device increases. Therefore, advanced design solut...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G06F11/10
CPCG06F11/1032G06F13/1668G11C5/025G11C7/1069G11C7/1096G11C2029/0411G11C2029/4402G06F11/1044G06F11/1048G06F11/1076G06F11/1068G11C8/10
Inventor 边嬉珍
Owner SK HYNIX INC